IXTP05N100M

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

FET Type :

N-Channel

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Product Category :

MOSFET

Pin Count :

3

Mounting Type :

Through Hole

Height :

16.07 mm

Type :

High Voltage MOSFET

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Transistor Polarity :

N-Channel

Rise Time :

19 ns

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

0.7A

Series :

--

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

25W Tc

Factory Lead Time :

24 Weeks

Mounting Style :

Through Hole

Width :

4.9 mm

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Terminal Finish :

TIN SILVER COPPER

Current - Continuous Drain (Id) @ 25°C :

700mA Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Qualification Status :

Not Qualified

Supplier Device Package :

TO-220AB

ECCN Code :

EAR99

Number of Elements :

1

Length :

10.36 mm

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

25 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Pbfree Code :

yes

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Terminal Position :

Single

Package :

Tube

Power Dissipation (Max) :

25W (Tc)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

RoHS :

Details

DS Breakdown Voltage-Min :

1000V

Surface Mount :

No

Package Shape :

RECTANGULAR

Number of Terminals :

3

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

1000V

Published :

2008

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

17 Ω

Avalanche Energy Rating (Eas) :

100 mJ

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

700mA

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Product Status :

Active

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Base Product Number :

IXTP05