IXTP06N120P

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Mfr.Part #
IXTP06N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 600MA TO220AB
Stock
45,499
In Stock :
45,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Drain to Source Resistance :
30 Ω
Height :
9.15 mm
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Published :
2007
Length :
10.66 mm
Max Operating Temperature :
150 °C
Turn-Off Delay Time :
50 ns
Surface Mount :
No
Power Dissipation-Max (Abs) :
42 W
Avalanche Energy Rating (Eas) :
50 mJ
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Terminal Position :
Single
Number of Channels :
1 Channel
Brand :
IXYS
Number of Pins :
3
Pin Count :
3
Manufacturer :
IXYS
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Base Product Number :
IXTP06
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
4.82 mm
Configuration :
Single
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
1200 V
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Mounting Type :
Through Hole
FET Type :
N-Channel
FET Feature :
--
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Supplier Device Package :
TO-220AB
Transistor Type :
1 N-Channel
Power Dissipation :
42W
Current - Continuous Drain (Id) @ 25°C :
600mA Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
270 pF
Drain to Source Breakdown Voltage :
1.2kV
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
32 Ω @ 500mA, 10V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
Max Power Dissipation :
42 W
Qualification Status :
Not Qualified
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Power Dissipation (Max) :
42W (Tc)
Drain-source On Resistance-Max :
34 Ω
Rds On Max :
32 Ω
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Power Dissipation-Max :
42W Tc
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Package / Case :
TO-220-3
Series :
PolarVHV™
Gate to Source Voltage (Vgs) :
20V
Rise Time :
24ns
JEDEC-95 Code :
TO-220AB
Product Status :
Active
Continuous Drain Current (ID) :
600mA
Drain to Source Voltage (Vdss) :
1200V
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
1.2A
Vgs (Max) :
±20V
Fall Time (Typ) :
27 ns
Polarity/Channel Type :
N-Channel
Factory Lead Time :
17 Weeks
Drain Current-Max (Abs) (ID) :
0.6A
Packaging :
Tube
Min Operating Temperature :
-55 °C
Datasheets
IXTP06N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP06N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, IXTP06N120P pinout, IXTP06N120P datasheet PDF, IXTP06N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP06N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP06N120P


N-Channel Tube 32 Ω @ 500mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-220-3

IXTP06N120P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 600mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 1.2A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 30 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP06N120P Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
single MOSFETs transistor is 30 Ω
a 1200V drain to source voltage (Vdss)


IXTP06N120P Applications


There are a lot of IXYS
IXTP06N120P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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