IXTP06N120P
- Mfr.Part #
- IXTP06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO220AB
- Stock
- 45,499
- In Stock :
- 45,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Drain to Source Resistance :
- 30 Ω
- Height :
- 9.15 mm
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2007
- Length :
- 10.66 mm
- Max Operating Temperature :
- 150 °C
- Turn-Off Delay Time :
- 50 ns
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 42 W
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- Number of Pins :
- 3
- Pin Count :
- 3
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Base Product Number :
- IXTP06
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 4.82 mm
- Configuration :
- Single
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 1200 V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Supplier Device Package :
- TO-220AB
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 42W
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 270 pF
- Drain to Source Breakdown Voltage :
- 1.2kV
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Max Power Dissipation :
- 42 W
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 42W (Tc)
- Drain-source On Resistance-Max :
- 34 Ω
- Rds On Max :
- 32 Ω
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 42W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Series :
- PolarVHV™
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 24ns
- JEDEC-95 Code :
- TO-220AB
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 600mA
- Drain to Source Voltage (Vdss) :
- 1200V
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 27 ns
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 17 Weeks
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Packaging :
- Tube
- Min Operating Temperature :
- -55 °C
- Datasheets
- IXTP06N120P

N-Channel Tube 32 Ω @ 500mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-220-3
IXTP06N120P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 600mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 1.2A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 30 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
single MOSFETs transistor is 30 Ω
a 1200V drain to source voltage (Vdss)
IXTP06N120P Applications
There are a lot of IXYS
IXTP06N120P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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