IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
Depletion Mode
JESD-609 Code :
e3
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Pbfree Code :
yes
Terminal Position :
Single
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Manufacturer :
IXYS
Power Dissipation :
1.1W
Operating Temperature :
-55°C~150°C TJ
Published :
2001
Mounting Type :
Through Hole
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Width :
4.83 mm
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
30 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current Rating :
4A
Mount :
Through Hole
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
1000 V
Power Dissipation-Max (Abs) :
25 W
Radiation Hardening :
No
Series :
--
Voltage - Rated DC :
1kV
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
0.4 A
Channel Mode :
Depletion
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Product Status :
Active
Drain to Source Breakdown Voltage :
1kV
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
--
Number of Terminations :
3
Base Product Number :
IXTP01
Package :
Tube
Drive Voltage (Max Rds On, Min Rds On) :
--
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Drain to Source Voltage (Vdss) :
1000V
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Pin Count :
3
Number of Terminals :
3
Drain-source On Resistance-Max :
110 Ω
Vgs (Max) :
±20V
Number of Pins :
3
Lead Free :
Lead Free
Element Configuration :
Single
Supplier Device Package :
TO-220AB
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
Not Applicable
Terminal Finish :
PURE TIN
JEDEC-95 Code :
TO-220AD
Case Connection :
DRAIN
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-220-3
Rise Time :
6ns
Length :
10.66 mm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Height :
9.15 mm
Power Dissipation-Max :
1.1W Ta 25W Tc
Operating Mode :
Depletion Mode
Transistor Element Material :
SILICON
Configuration :
Single
RoHS :
Details
Product Category :
MOSFET
Factory Lead Time :
8 Weeks
Reach Compliance Code :
Compliant
HTS Code :
8541.29.00.95
ECCN Code :
EAR99
Continuous Drain Current (ID) :
100mA
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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