IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2001
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Base Product Number :
- IXTP01
- Series :
- --
- Pbfree Code :
- yes
- Rise Time :
- 6ns
- Packaging :
- Tube
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 100mA
- Package :
- Tube
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 1kV
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.29.00.95
- Package / Case :
- TO-220-3
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- Depletion Mode
- Configuration :
- Single
- Product Status :
- Active
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 25 W
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- PURE TIN
- Height :
- 9.15 mm
- Radiation Hardening :
- No
- DS Breakdown Voltage-Min :
- 1000 V
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 30 ns
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Length :
- 10.66 mm
- Power Dissipation :
- 1.1W
- Reach Compliance Code :
- Compliant
- Channel Mode :
- Depletion
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Drain to Source Breakdown Voltage :
- 1kV
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- --
- JESD-609 Code :
- e3
- FET Feature :
- Depletion Mode
- Supplier Device Package :
- TO-220AB
- Current Rating :
- 4A
- Vgs (Max) :
- ±20V
- Width :
- 4.83 mm
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AD
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 110 Ω
- Datasheets
- IXTP01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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