IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2001
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Base Product Number :
IXTP01
Series :
--
Pbfree Code :
yes
Rise Time :
6ns
Packaging :
Tube
Pin Count :
3
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
0.4 A
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
100mA
Package :
Tube
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Power Dissipation-Max :
1.1W Ta 25W Tc
Drain to Source Voltage (Vdss) :
1000V
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Voltage - Rated DC :
1kV
RoHS Status :
ROHS3 Compliant
HTS Code :
8541.29.00.95
Package / Case :
TO-220-3
Polarity/Channel Type :
N-Channel
Operating Mode :
Depletion Mode
Configuration :
Single
Product Status :
Active
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
25 W
Moisture Sensitivity Level (MSL) :
Not Applicable
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
PURE TIN
Height :
9.15 mm
Radiation Hardening :
No
DS Breakdown Voltage-Min :
1000 V
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
30 ns
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Length :
10.66 mm
Power Dissipation :
1.1W
Reach Compliance Code :
Compliant
Channel Mode :
Depletion
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Number of Pins :
3
Drive Voltage (Max Rds On, Min Rds On) :
--
Drain to Source Breakdown Voltage :
1kV
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Number of Elements :
1
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
--
JESD-609 Code :
e3
FET Feature :
Depletion Mode
Supplier Device Package :
TO-220AB
Current Rating :
4A
Vgs (Max) :
±20V
Width :
4.83 mm
FET Type :
N-Channel
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Factory Lead Time :
8 Weeks
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-220AD
Number of Terminals :
3
Manufacturer :
IXYS
Drain-source On Resistance-Max :
110 Ω
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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