IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Product Type :
MOSFET
Current Rating :
4A
Turn-Off Delay Time :
30 ns
JEDEC-95 Code :
TO-220AD
Rise Time :
6ns
RoHS :
Details
Transistor Polarity :
N-Channel
Factory Lead Time :
8 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
--
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Moisture Sensitivity Level (MSL) :
Not Applicable
Pulsed Drain Current-Max (IDM) :
0.4 A
Product Category :
MOSFET
Number of Channels :
1 Channel
FET Feature :
Depletion Mode
Published :
2001
ECCN Code :
EAR99
Power Dissipation-Max :
1.1W Ta 25W Tc
FET Type :
N-Channel
Height :
9.15 mm
Channel Mode :
Depletion
Drain to Source Breakdown Voltage :
1kV
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Brand :
IXYS
Element Configuration :
Single
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Terminal Finish :
PURE TIN
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
1000V
Drive Voltage (Max Rds On, Min Rds On) :
--
Drain-source On Resistance-Max :
110 Ω
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Operating Mode :
Depletion Mode
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
25 W
Length :
10.66 mm
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Number of Elements :
1
Number of Terminals :
3
Number of Pins :
3
JESD-609 Code :
e3
Case Connection :
DRAIN
Package :
Tube
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
Power Dissipation :
1.1W
Radiation Hardening :
No
Voltage - Rated DC :
1kV
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Packaging :
Tube
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Mounting Style :
Through Hole
Base Product Number :
IXTP01
DS Breakdown Voltage-Min :
1000 V
Manufacturer :
IXYS
HTS Code :
8541.29.00.95
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
100mA
Series :
--
Product Status :
Active
Width :
4.83 mm
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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