IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Length :
10.66 mm
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Package / Case :
TO-220-3
Element Configuration :
Single
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
100mA
Channel Mode :
Depletion
Base Product Number :
IXTP01
ECCN Code :
EAR99
Operating Mode :
Depletion Mode
RoHS :
Details
Product Status :
Active
Number of Pins :
3
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Vgs(th) (Max) @ Id :
--
Power Dissipation-Max :
1.1W Ta 25W Tc
Turn-Off Delay Time :
30 ns
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-220AB
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
JESD-30 Code :
R-PSFM-T3
Current Rating :
4A
Transistor Type :
1 N-Channel
Rise Time :
6ns
Case Connection :
DRAIN
Series :
--
Factory Lead Time :
8 Weeks
HTS Code :
8541.29.00.95
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Vgs (Max) :
±20V
Height :
9.15 mm
Package Shape :
RECTANGULAR
Mount :
Through Hole
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
1000V
Product Category :
MOSFET
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Pin Count :
3
Surface Mount :
No
Drain to Source Breakdown Voltage :
1kV
Width :
4.83 mm
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Voltage - Rated DC :
1kV
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
1000 V
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
110 Ω
Power Dissipation-Max (Abs) :
25 W
Number of Terminals :
3
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
Not Applicable
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On, Min Rds On) :
--
Mounting Style :
Through Hole
Power Dissipation :
1.1W
Qualification Status :
Not Qualified
Pbfree Code :
yes
FET Feature :
Depletion Mode
Lead Free :
Lead Free
FET Type :
N-Channel
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
0.4 A
Number of Elements :
1
Published :
2001
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
PURE TIN
JEDEC-95 Code :
TO-220AD
Number of Channels :
1 Channel
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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