IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Voltage - Rated DC :
1kV
Pbfree Code :
yes
Length :
10.66 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
25 W
Power Dissipation :
1.1W
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Case Connection :
DRAIN
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
1kV
Drain-source On Resistance-Max :
110 Ω
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
JEDEC-95 Code :
TO-220AD
FET Type :
N-Channel
ECCN Code :
EAR99
Continuous Drain Current (ID) :
100mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Turn-Off Delay Time :
30 ns
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Mounting Style :
Through Hole
RoHS :
Details
Width :
4.83 mm
FET Feature :
Depletion Mode
Manufacturer :
IXYS
Terminal Finish :
PURE TIN
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On, Min Rds On) :
--
Configuration :
Single
Packaging :
Tube
Mounting Type :
Through Hole
Pin Count :
3
Lead Free :
Lead Free
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
Not Applicable
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
1000 V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Number of Channels :
1 Channel
Radiation Hardening :
No
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Rise Time :
6ns
Product Type :
MOSFET
Supplier Device Package :
TO-220AB
Channel Mode :
Depletion
Drain to Source Voltage (Vdss) :
1000V
Series :
--
Published :
2001
Vgs (Max) :
±20V
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
Terminal Position :
Single
Base Product Number :
IXTP01
Operating Mode :
Depletion Mode
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
0.4 A
Vgs(th) (Max) @ Id :
--
Transistor Type :
1 N-Channel
Power Dissipation-Max :
1.1W Ta 25W Tc
HTS Code :
8541.29.00.95
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Current Rating :
4A
Reach Compliance Code :
Compliant
Height :
9.15 mm
Number of Terminations :
3
Product Category :
MOSFET
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Transistor Polarity :
N-Channel
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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