IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On) :
--
Continuous Drain Current (ID) :
100mA
Series :
--
Package / Case :
TO-220-3
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1.1W Ta 25W Tc
Number of Terminals :
3
JESD-609 Code :
e3
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Channel Mode :
Depletion
Factory Lead Time :
8 Weeks
Package :
Tube
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
25 W
Current Rating :
4A
JESD-30 Code :
R-PSFM-T3
HTS Code :
8541.29.00.95
Rise Time :
6ns
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
30 ns
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
FET Feature :
Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
1000V
Product Type :
MOSFET
Number of Terminations :
3
Vgs(th) (Max) @ Id :
--
Voltage - Rated DC :
1kV
Surface Mount :
No
Number of Channels :
1 Channel
Drain to Source Breakdown Voltage :
1kV
Power Dissipation :
1.1W
Transistor Element Material :
SILICON
Terminal Position :
Single
Base Product Number :
IXTP01
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Operating Mode :
Depletion Mode
DS Breakdown Voltage-Min :
1000 V
Packaging :
Tube
FET Type :
N-Channel
Mount :
Through Hole
Published :
2001
Terminal Finish :
PURE TIN
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Pulsed Drain Current-Max (IDM) :
0.4 A
Vgs (Max) :
±20V
Supplier Device Package :
TO-220AB
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Pbfree Code :
yes
Length :
10.66 mm
Element Configuration :
Single
Case Connection :
DRAIN
Width :
4.83 mm
Drain-source On Resistance-Max :
110 Ω
Moisture Sensitivity Level (MSL) :
Not Applicable
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-220AD
Product Status :
Active
Height :
9.15 mm
Manufacturer :
IXYS
Pin Count :
3
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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