IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Length :
- 10.66 mm
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 100mA
- Channel Mode :
- Depletion
- Base Product Number :
- IXTP01
- ECCN Code :
- EAR99
- Operating Mode :
- Depletion Mode
- RoHS :
- Details
- Product Status :
- Active
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Vgs(th) (Max) @ Id :
- --
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Turn-Off Delay Time :
- 30 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-220AB
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Current Rating :
- 4A
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 6ns
- Case Connection :
- DRAIN
- Series :
- --
- Factory Lead Time :
- 8 Weeks
- HTS Code :
- 8541.29.00.95
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Vgs (Max) :
- ±20V
- Height :
- 9.15 mm
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 1000V
- Product Category :
- MOSFET
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Brand :
- IXYS
- Pin Count :
- 3
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 1kV
- Width :
- 4.83 mm
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 1kV
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 1000 V
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 110 Ω
- Power Dissipation-Max (Abs) :
- 25 W
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Mounting Style :
- Through Hole
- Power Dissipation :
- 1.1W
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- FET Feature :
- Depletion Mode
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- Number of Elements :
- 1
- Published :
- 2001
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- PURE TIN
- JEDEC-95 Code :
- TO-220AD
- Number of Channels :
- 1 Channel
- Datasheets
- IXTP01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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