IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Depletion Mode
- JESD-609 Code :
- e3
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Manufacturer :
- IXYS
- Power Dissipation :
- 1.1W
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2001
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Width :
- 4.83 mm
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 30 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 4A
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation-Max (Abs) :
- 25 W
- Radiation Hardening :
- No
- Series :
- --
- Voltage - Rated DC :
- 1kV
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- Channel Mode :
- Depletion
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 1kV
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- --
- Number of Terminations :
- 3
- Base Product Number :
- IXTP01
- Package :
- Tube
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 1000V
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Pin Count :
- 3
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 110 Ω
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Supplier Device Package :
- TO-220AB
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Terminal Finish :
- PURE TIN
- JEDEC-95 Code :
- TO-220AD
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-220-3
- Rise Time :
- 6ns
- Length :
- 10.66 mm
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Height :
- 9.15 mm
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Operating Mode :
- Depletion Mode
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- RoHS :
- Details
- Product Category :
- MOSFET
- Factory Lead Time :
- 8 Weeks
- Reach Compliance Code :
- Compliant
- HTS Code :
- 8541.29.00.95
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 100mA
- Datasheets
- IXTP01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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