IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Height :
9.15 mm
Continuous Drain Current (ID) :
100mA
JEDEC-95 Code :
TO-220AD
Mounting Type :
Through Hole
Width :
4.83 mm
Polarity/Channel Type :
N-Channel
Package / Case :
TO-220-3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Current Rating :
4A
JESD-30 Code :
R-PSFM-T3
Mount :
Through Hole
Product Type :
MOSFET
Number of Elements :
1
Brand :
IXYS
Element Configuration :
Single
Packaging :
Tube
Base Product Number :
IXTP01
Pulsed Drain Current-Max (IDM) :
0.4 A
Drain to Source Breakdown Voltage :
1kV
Terminal Position :
Single
FET Type :
N-Channel
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
1000 V
Pbfree Code :
yes
Surface Mount :
No
Operating Mode :
Depletion Mode
Drive Voltage (Max Rds On, Min Rds On) :
--
Number of Terminations :
3
HTS Code :
8541.29.00.95
Radiation Hardening :
No
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
--
Pin Count :
3
Power Dissipation-Max (Abs) :
25 W
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
30 ns
FET Feature :
Depletion Mode
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Rise Time :
6ns
Moisture Sensitivity Level (MSL) :
Not Applicable
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Terminal Finish :
PURE TIN
Package :
Tube
Transistor Type :
1 N-Channel
Channel Mode :
Depletion
Drain to Source Voltage (Vdss) :
1000V
Number of Terminals :
3
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Published :
2001
Reach Compliance Code :
Compliant
Power Dissipation-Max :
1.1W Ta 25W Tc
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Supplier Device Package :
TO-220AB
Number of Pins :
3
Transistor Application :
SWITCHING
Voltage - Rated DC :
1kV
Length :
10.66 mm
Case Connection :
DRAIN
Series :
--
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Drain-source On Resistance-Max :
110 Ω
RoHS :
Details
Power Dissipation :
1.1W
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Vgs (Max) :
±20V
Product Status :
Active
JESD-609 Code :
e3
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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