IXTP01N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Package / Case :

TO-220-3

FET Feature :

Depletion Mode

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Radiation Hardening :

No

Mounting Style :

Through Hole

Power Dissipation-Max :

1.1W Ta 25W Tc

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Brand :

IXYS

FET Type :

N-Channel

DS Breakdown Voltage-Min :

1000 V

Voltage - Rated DC :

1kV

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

PURE TIN

Series :

--

Power Dissipation-Max (Abs) :

25 W

Rise Time :

6ns

Case Connection :

DRAIN

Surface Mount :

No

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Turn-Off Delay Time :

30 ns

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Number of Elements :

1

Width :

4.83 mm

Configuration :

Single

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Current Rating :

4A

Product Status :

Active

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

5.8 nC @ 5 V

Continuous Drain Current (ID) :

100mA

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Supplier Device Package :

TO-220AB

Number of Pins :

3

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

0.4 A

Power Dissipation :

1.1W

Packaging :

Tube

JEDEC-95 Code :

TO-220AD

Published :

2001

Rds On (Max) @ Id, Vgs :

110 Ω @ 50mA, 0V

Mount :

Through Hole

Package :

Tube

Drain-source On Resistance-Max :

110 Ω

Drain to Source Breakdown Voltage :

1kV

Moisture Sensitivity Level (MSL) :

Not Applicable

Base Product Number :

IXTP01

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On, Min Rds On) :

--

Drain to Source Voltage (Vdss) :

1000V

Number of Channels :

1 Channel

Number of Terminations :

3

Length :

10.66 mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

JESD-609 Code :

e3

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Channel Mode :

Depletion

Transistor Type :

1 N-Channel

Lead Free :

Lead Free

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

RoHS :

Details

Vgs(th) (Max) @ Id :

--

Manufacturer :

IXYS

Operating Mode :

Depletion Mode

Height :

9.15 mm