IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Voltage - Rated DC :
- 1kV
- Packaging :
- Tube
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 100mA
- Power Dissipation :
- 1.1W
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 30 ns
- Brand :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Rise Time :
- 6ns
- Package / Case :
- TO-220-3
- Drain-source On Resistance-Max :
- 110 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Channel Mode :
- Depletion
- Length :
- 10.66 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 4A
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Details
- Number of Pins :
- 3
- Power Dissipation-Max (Abs) :
- 25 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Terminal Finish :
- PURE TIN
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 1000 V
- Pbfree Code :
- yes
- Width :
- 4.83 mm
- Radiation Hardening :
- No
- Package :
- Tube
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- --
- Published :
- 2001
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Element Configuration :
- Single
- Operating Mode :
- Depletion Mode
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- Product Type :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain to Source Breakdown Voltage :
- 1kV
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- Depletion Mode
- Lead Free :
- Lead Free
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXTP01
- JEDEC-95 Code :
- TO-220AD
- Height :
- 9.15 mm
- Series :
- --
- Factory Lead Time :
- 8 Weeks
- HTS Code :
- 8541.29.00.95
- Configuration :
- Single
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Mounting Style :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Datasheets
- IXTP01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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