IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
8 Weeks
Supplier Device Package :
TO-220AB
Pulsed Drain Current-Max (IDM) :
0.4 A
JESD-609 Code :
e3
Published :
2001
Qualification Status :
Not Qualified
Product Type :
MOSFET
Number of Elements :
1
Current Rating :
4A
RoHS :
Details
Package :
Tube
Surface Mount :
No
Drive Voltage (Max Rds On, Min Rds On) :
--
Voltage - Rated DC :
1kV
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
DS Breakdown Voltage-Min :
1000 V
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Length :
10.66 mm
Moisture Sensitivity Level (MSL) :
Not Applicable
Package Shape :
RECTANGULAR
Brand :
IXYS
Continuous Drain Current (ID) :
100mA
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Transistor Element Material :
SILICON
Terminal Position :
Single
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Series :
--
Packaging :
Tube
Vgs (Max) :
±20V
Base Product Number :
IXTP01
Lead Free :
Lead Free
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Terminal Finish :
PURE TIN
Minimum Operating Temperature :
- 55 C
Power Dissipation :
1.1W
FET Feature :
Depletion Mode
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Rise Time :
6ns
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Operating Mode :
Depletion Mode
Drain to Source Voltage (Vdss) :
1000V
Configuration :
Single
Channel Mode :
Depletion
Pin Count :
3
Number of Pins :
3
Vgs(th) (Max) @ Id :
--
Number of Terminations :
3
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.1W Ta 25W Tc
Width :
4.83 mm
Power Dissipation-Max (Abs) :
25 W
Drain to Source Breakdown Voltage :
1kV
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Number of Terminals :
3
Package / Case :
TO-220-3
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Terminal Form :
THROUGH-HOLE
ECCN Code :
EAR99
Transistor Type :
1 N-Channel
Drain-source On Resistance-Max :
110 Ω
Maximum Operating Temperature :
+ 150 C
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
HTS Code :
8541.29.00.95
JEDEC-95 Code :
TO-220AD
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
30 ns
Radiation Hardening :
No
Height :
9.15 mm
Datasheets
IXTP01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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