IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- JESD-609 Code :
- e3
- Published :
- 2001
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Current Rating :
- 4A
- RoHS :
- Details
- Package :
- Tube
- Surface Mount :
- No
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Voltage - Rated DC :
- 1kV
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- DS Breakdown Voltage-Min :
- 1000 V
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Length :
- 10.66 mm
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 100mA
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS
- Series :
- --
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXTP01
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- PURE TIN
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 1.1W
- FET Feature :
- Depletion Mode
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Rise Time :
- 6ns
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Operating Mode :
- Depletion Mode
- Drain to Source Voltage (Vdss) :
- 1000V
- Configuration :
- Single
- Channel Mode :
- Depletion
- Pin Count :
- 3
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- --
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Width :
- 4.83 mm
- Power Dissipation-Max (Abs) :
- 25 W
- Drain to Source Breakdown Voltage :
- 1kV
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Number of Terminals :
- 3
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 110 Ω
- Maximum Operating Temperature :
- + 150 C
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.95
- JEDEC-95 Code :
- TO-220AD
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 30 ns
- Radiation Hardening :
- No
- Height :
- 9.15 mm
- Datasheets
- IXTP01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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