IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- Depletion Mode
- Mounting Style :
- Through Hole
- RoHS :
- Details
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 60W (Tc)
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Channel Type :
- N Channel
- Base Product Number :
- IXTP08
- Factory Lead Time :
- 24 Weeks
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 60W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Product Status :
- Active
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Power Dissipation :
- 60W
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Channel Mode :
- Depletion
- Vgs(th) (Max) @ Id :
- --
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Rise Time :
- 57 ns
- Reach Compliance Code :
- Unknown
- Continuous Drain Current Id :
- 800mA
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Supplier Device Package :
- TO-220AB
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 1kV
- Drain to Source Voltage (Vdss) :
- 1000V
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 800mA
- Product Type :
- MOSFET
- Qualification :
- -
- Datasheets
- IXTP08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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