IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Power Dissipation :
- 60W
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Qualification :
- -
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Channel Type :
- N Channel
- Vgs(th) (Max) @ Id :
- --
- Supplier Device Package :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Base Product Number :
- IXTP08
- Brand :
- IXYS
- Rise Time :
- 57 ns
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Continuous Drain Current Id :
- 800mA
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Packaging :
- Tube
- FET Feature :
- Depletion Mode
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Series :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Drain to Source Breakdown Voltage :
- 1kV
- Factory Lead Time :
- 24 Weeks
- Published :
- 2009
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 800mA
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 60W Tc
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Package :
- Tube
- Mount :
- Through Hole
- Channel Mode :
- Depletion
- Power Dissipation (Max) :
- 60W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTP08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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