IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Supplier Device Package :
- TO-220AB
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 1kV
- Factory Lead Time :
- 24 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 57 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- --
- Drain to Source Voltage (Vdss) :
- 1000V
- Base Product Number :
- IXTP08
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 60W
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 800mA
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Published :
- 2009
- Manufacturer :
- IXYS
- Mount :
- Through Hole
- Configuration :
- Single
- Series :
- --
- Package :
- Tube
- Element Configuration :
- Single
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 60W (Tc)
- RoHS :
- Details
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- Depletion Mode
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Depletion
- Power Dissipation-Max :
- 60W Tc
- Channel Type :
- N Channel
- Qualification :
- -
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Continuous Drain Current Id :
- 800mA
- Datasheets
- IXTP08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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