IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 24 Weeks
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Number of Elements :
- 1
- Channel Type :
- N Channel
- Power Dissipation :
- 60W
- Package :
- Tube
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 60W (Tc)
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-220AB
- Channel Mode :
- Depletion
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Published :
- 2009
- Rise Time :
- 57 ns
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 60W Tc
- Base Product Number :
- IXTP08
- Continuous Drain Current Id :
- 800mA
- Vgs(th) (Max) @ Id :
- --
- Manufacturer :
- IXYS
- FET Feature :
- Depletion Mode
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Number of Pins :
- 3
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 1kV
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Continuous Drain Current (ID) :
- 800mA
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Datasheets
- IXTP08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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