IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Series :
- --
- Rise Time :
- 57 ns
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Vgs(th) (Max) @ Id :
- --
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Channel Type :
- N Channel
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- Qualification :
- -
- RoHS :
- Details
- Power Dissipation :
- 60W
- Factory Lead Time :
- 24 Weeks
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Channel Mode :
- Depletion
- Configuration :
- Single
- Brand :
- IXYS
- Pin Count :
- 3
- Continuous Drain Current Id :
- 800mA
- Power Dissipation-Max :
- 60W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Base Product Number :
- IXTP08
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 1kV
- Transistor Application :
- SWITCHING
- FET Feature :
- Depletion Mode
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 1000V
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 60W (Tc)
- Continuous Drain Current (ID) :
- 800mA
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-220AB
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Datasheets
- IXTP08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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