IXTP10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

200W (Tc)

Product Status :

Active

FET Feature :

--

DS Breakdown Voltage-Min :

600 V

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

24 Weeks

Package :

Tube

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

200 W

Power Dissipation-Max :

200W Tc

Brand :

IXYS

Surface Mount :

No

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Case Connection :

DRAIN

Power Dissipation :

200W

Base Product Number :

IXTP10

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3

Supplier Device Package :

TO-220AB

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Compliant

Number of Terminals :

3

Channel Mode :

Enhancement

Series :

Polar™

Voltage - Rated DC :

600V

Maximum Operating Temperature :

+ 150 C

Current Rating :

10A

Qualification Status :

Not Qualified

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

RECTANGULAR

Number of Elements :

1

Element Configuration :

Single

FET Type :

N-Channel

Terminal Position :

Single

Configuration :

Single

Rise Time :

27ns

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Drain to Source Voltage (Vdss) :

600V

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.83 mm

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

30A

Height :

16 mm

Drain-source On Resistance-Max :

0.74Ohm

Avalanche Energy Rating (Eas) :

500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Tradename :

PolarHV

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

65 ns

Mounting Style :

Through Hole

Terminal Finish :

Pure Tin (Sn)

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Packaging :

Tube

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

10A

Published :

2006

Length :

10.41 mm

Fall Time (Typ) :

21 ns

Drain Current-Max (Abs) (ID) :

10 A

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

3

Number of Terminations :

3

Type :

PolarHV Power MOSFET