IXTP10N60P

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Mfr.Part #
IXTP10N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO220AB
Stock
17,273
In Stock :
17,273

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
Configuration :
Single
Pin Count :
3
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Minimum Operating Temperature :
- 55 C
Length :
10.41 mm
Terminal Position :
Single
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Transistor Application :
SWITCHING
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Power Dissipation-Max (Abs) :
200 W
Number of Terminations :
3
Published :
2006
Product Category :
MOSFET
Base Product Number :
IXTP10
Vgs (Max) :
±30V
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Turn-Off Delay Time :
65 ns
Mounting Type :
Through Hole
Number of Channels :
1 Channel
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Voltage - Rated DC :
600V
Drain Current-Max (Abs) (ID) :
10 A
Pulsed Drain Current-Max (IDM) :
30A
Channel Mode :
Enhancement
Type :
PolarHV Power MOSFET
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSFM-T3
Drain to Source Voltage (Vdss) :
600V
Product Type :
MOSFET
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
FET Feature :
--
Power Dissipation :
200W
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
RoHS :
Details
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Terminal Finish :
Pure Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Tradename :
PolarHV
Surface Mount :
No
Rise Time :
27ns
Avalanche Energy Rating (Eas) :
500 mJ
Current Rating :
10A
Packaging :
Tube
Package Shape :
RECTANGULAR
Height :
16 mm
Fall Time (Typ) :
21 ns
Width :
4.83 mm
Gate to Source Voltage (Vgs) :
30V
Supplier Device Package :
TO-220AB
Power Dissipation (Max) :
200W (Tc)
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
600V
Case Connection :
DRAIN
Power Dissipation-Max :
200W Tc
Series :
Polar™
Drain-source On Resistance-Max :
0.74Ohm
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
10A
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
10A Tc
JEDEC-95 Code :
TO-220AB
Brand :
IXYS
Factory Lead Time :
24 Weeks
DS Breakdown Voltage-Min :
600 V
Product Status :
Active
Element Configuration :
Single
Transistor Polarity :
N-Channel
Datasheets
IXTP10N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP10N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Type:PolarHV Power MOSFET, Operating Temperature:-55°C~150°C TJ, IXTP10N60P pinout, IXTP10N60P datasheet PDF, IXTP10N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP10N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP10N60P


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3

IXTP10N60P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 10 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 30A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP10N60P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)


IXTP10N60P Applications


There are a lot of IXYS
IXTP10N60P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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