IXTP10N60P
- Mfr.Part #
- IXTP10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 17,273
- In Stock :
- 17,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-220AB
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Mount :
- Through Hole
- Height :
- 16 mm
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.74Ohm
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Surface Mount :
- No
- Published :
- 2006
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Terminal Finish :
- Pure Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Turn-Off Delay Time :
- 65 ns
- Power Dissipation-Max :
- 200W Tc
- Pulsed Drain Current-Max (IDM) :
- 30A
- Type :
- PolarHV Power MOSFET
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 200W
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 600 V
- Fall Time (Typ) :
- 21 ns
- Base Product Number :
- IXTP10
- Gate to Source Voltage (Vgs) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 10 A
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 200W (Tc)
- Mounting Style :
- Through Hole
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 10A
- Length :
- 10.41 mm
- Minimum Operating Temperature :
- - 55 C
- Tradename :
- PolarHV
- Voltage - Rated DC :
- 600V
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Element Configuration :
- Single
- Current Rating :
- 10A
- Package :
- Tube
- FET Feature :
- --
- Rise Time :
- 27ns
- Series :
- Polar™
- Power Dissipation-Max (Abs) :
- 200 W
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 4.83 mm
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Product Status :
- Active
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Datasheets
- IXTP10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 10 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 30A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
IXTP10N60P Applications
There are a lot of IXYS
IXTP10N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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