IXTP10N60P
- Mfr.Part #
- IXTP10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 17,273
- In Stock :
- 17,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Pure Tin (Sn)
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Rise Time :
- 27ns
- Base Product Number :
- IXTP10
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 65 ns
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Fall Time (Typ) :
- 21 ns
- Width :
- 4.83 mm
- Factory Lead Time :
- 24 Weeks
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 10A
- Length :
- 10.41 mm
- Supplier Device Package :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2006
- Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Power Dissipation (Max) :
- 200W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Number of Terminals :
- 3
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 200 W
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.74Ohm
- Tradename :
- PolarHV
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 200W Tc
- Package / Case :
- TO-220-3
- Current Rating :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Type :
- PolarHV Power MOSFET
- Terminal Position :
- Single
- Surface Mount :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Power Dissipation :
- 200W
- Case Connection :
- DRAIN
- Series :
- Polar™
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 10 A
- Transistor Polarity :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 30A
- Manufacturer :
- IXYS
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Height :
- 16 mm
- Datasheets
- IXTP10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 10 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 30A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
IXTP10N60P Applications
There are a lot of IXYS
IXTP10N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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