IXTP10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Polar™

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Type :

PolarHV Power MOSFET

Surface Mount :

No

Vgs (Max) :

±30V

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

65 ns

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Packaging :

Tube

Terminal Finish :

Pure Tin (Sn)

Terminal Position :

Single

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

24 Weeks

Avalanche Energy Rating (Eas) :

500 mJ

Product Status :

Active

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation :

200W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

30A

DS Breakdown Voltage-Min :

600 V

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Channels :

1 Channel

Base Product Number :

IXTP10

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.74Ohm

Package Shape :

RECTANGULAR

Height :

16 mm

Number of Terminals :

3

Current Rating :

10A

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pbfree Code :

yes

Manufacturer :

IXYS

Fall Time (Typ) :

21 ns

Mounting Style :

Through Hole

Power Dissipation (Max) :

200W (Tc)

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

10 A

Package :

Tube

Package / Case :

TO-220-3

Element Configuration :

Single

Number of Terminations :

3

Published :

2006

Product Type :

MOSFET

RoHS :

Details

Product Category :

MOSFET

Width :

4.83 mm

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

200 W

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Length :

10.41 mm

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Voltage - Rated DC :

600V

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

27ns

Supplier Device Package :

TO-220AB

Tradename :

PolarHV

Power Dissipation-Max :

200W Tc

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED