IXTP10N60P
- Mfr.Part #
- IXTP10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 17,273
- In Stock :
- 17,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- PolarHV
- Fall Time (Typ) :
- 21 ns
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 10 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Length :
- 10.41 mm
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 30A
- Type :
- PolarHV Power MOSFET
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 200 W
- Continuous Drain Current (ID) :
- 10A
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Drain-source On Resistance-Max :
- 0.74Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.83 mm
- Series :
- Polar™
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Power Dissipation-Max :
- 200W Tc
- Current Rating :
- 10A
- Package Shape :
- RECTANGULAR
- Height :
- 16 mm
- RoHS :
- Details
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 600 V
- Gate to Source Voltage (Vgs) :
- 30V
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Terminal Finish :
- Pure Tin (Sn)
- Factory Lead Time :
- 24 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Power Dissipation (Max) :
- 200W (Tc)
- Base Product Number :
- IXTP10
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 65 ns
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Rise Time :
- 27ns
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Element Configuration :
- Single
- FET Feature :
- --
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Package :
- Tube
- Packaging :
- Tube
- Pbfree Code :
- yes
- Power Dissipation :
- 200W
- Vgs (Max) :
- ±30V
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-220AB
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Manufacturer :
- IXYS
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTP10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 10 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 30A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
IXTP10N60P Applications
There are a lot of IXYS
IXTP10N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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