IXTP08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

34 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

1000V

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Brand :

IXYS

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation :

42W

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Power Dissipation (Max) :

42W (Tc)

Package / Case :

TO-220-3

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

1.8A

Pbfree Code :

yes

Power Dissipation-Max :

42W Tc

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Number of Terminals :

3

Power Dissipation-Max (Abs) :

42 W

Factory Lead Time :

24 Weeks

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4V @ 50μA

Mounting Style :

Through Hole

Package Shape :

RECTANGULAR

Surface Mount :

No

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Terminal Position :

Single

Lead Free :

Lead Free

FET Feature :

--

Package :

Tube

Continuous Drain Current (ID) :

800mA

Drain-source On Resistance-Max :

20 Ω

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Product Status :

Active

Published :

2009

Drain to Source Breakdown Voltage :

1kV

Supplier Device Package :

TO-220AB

Base Product Number :

IXTP08

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Polar™

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Drain Current-Max (Abs) (ID) :

0.8A

Pin Count :

3

Product Type :

MOSFET

Reach Compliance Code :

Compliant

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

JEDEC-95 Code :

TO-220AB

Rise Time :

37ns

Gate to Source Voltage (Vgs) :

20V

Width :

4.83 mm

FET Type :

N-Channel

Number of Terminations :

3

DS Breakdown Voltage-Min :

1000 V

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

35 ns

Avalanche Energy Rating (Eas) :

80 mJ

Manufacturer :

IXYS

RoHS :

Details

JESD-609 Code :

e1

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Height :

9.15 mm

Length :

10.66 mm

Current - Continuous Drain (Id) @ 25°C :

800mA Tc