IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Power Dissipation-Max :
50W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
0.8A
Base Product Number :
IXTP08
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Number of Elements :
1
Width :
4.83 mm
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Power Dissipation-Max (Abs) :
50 W
Product Category :
MOSFET
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Channel Mode :
Enhancement
FET Type :
N-Channel
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
800mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
50W (Tc)
Pulsed Drain Current-Max (IDM) :
1.8A
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Height :
9.15 mm
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-220-3
JESD-609 Code :
e1
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
1200V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Polarity :
N-Channel
Rise Time :
26 ns
Drain-source On Resistance-Max :
25 Ω
RoHS :
Details
Packaging :
Tube
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
80 mJ
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Series :
Polar™
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-220AB
Length :
10.66 mm
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50μA
JEDEC-95 Code :
TO-220AB
Brand :
IXYS
Package :
Tube
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Factory Lead Time :
24 Weeks
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2008
Drain to Source Voltage (Vdss) :
1200V
FET Feature :
--
Number of Terminals :
3
Pbfree Code :
yes
Manufacturer :
IXYS
Mount :
Through Hole
Number of Pins :
3
Surface Mount :
No
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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