IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Power Dissipation-Max :
- 50W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Base Product Number :
- IXTP08
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Width :
- 4.83 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Power Dissipation-Max (Abs) :
- 50 W
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 800mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 50W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Height :
- 9.15 mm
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 1200V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Polarity :
- N-Channel
- Rise Time :
- 26 ns
- Drain-source On Resistance-Max :
- 25 Ω
- RoHS :
- Details
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- Polar™
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-220AB
- Length :
- 10.66 mm
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- JEDEC-95 Code :
- TO-220AB
- Brand :
- IXYS
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 1200V
- FET Feature :
- --
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Mount :
- Through Hole
- Number of Pins :
- 3
- Surface Mount :
- No
- Datasheets
- IXTP08N120P

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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