IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 1200V
- Power Dissipation-Max (Abs) :
- 50 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Supplier Device Package :
- TO-220AB
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 26 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Series :
- Polar™
- Continuous Drain Current (ID) :
- 800mA
- JESD-30 Code :
- R-PSFM-T3
- Product Category :
- MOSFET
- Packaging :
- Tube
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 1200V
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 24 Weeks
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 25 Ω
- Product Status :
- Active
- FET Feature :
- --
- Width :
- 4.83 mm
- Length :
- 10.66 mm
- Height :
- 9.15 mm
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 50W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2008
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXTP08
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Power Dissipation-Max :
- 50W Tc
- Datasheets
- IXTP08N120P

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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