IXTP08N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1200V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

25 Ω

Base Product Number :

IXTP08

Terminal Position :

Single

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Height :

9.15 mm

Product Category :

MOSFET

Power Dissipation (Max) :

50W (Tc)

Pbfree Code :

yes

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Terminals :

3

Series :

Polar™

Lead Free :

Lead Free

Continuous Drain Current (ID) :

800mA

Product Type :

MOSFET

Length :

10.66 mm

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

0.8A

Drain to Source Voltage (Vdss) :

1200V

FET Type :

N-Channel

Factory Lead Time :

24 Weeks

Mount :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

ECCN Code :

EAR99

Package :

Tube

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Width :

4.83 mm

Published :

2008

Supplier Device Package :

TO-220AB

Pulsed Drain Current-Max (IDM) :

1.8A

Product Status :

Active

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Number of Channels :

1 Channel

RoHS :

Details

Case Connection :

DRAIN

Rise Time :

26 ns

Transistor Polarity :

N-Channel

Number of Pins :

3

Mounting Style :

Through Hole

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

50 W

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

25 Ω @ 500mA, 10V

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

333pF @ 25V

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

80 mJ

Channel Mode :

Enhancement

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

50W Tc

Packaging :

Tube