IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Drain to Source Voltage (Vdss) :
1200V
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Avalanche Energy Rating (Eas) :
80 mJ
Series :
Polar™
Factory Lead Time :
24 Weeks
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
0.8A
Power Dissipation-Max :
50W Tc
Package :
Tube
Product Status :
Active
RoHS :
Details
Supplier Device Package :
TO-220AB
Length :
10.66 mm
Channel Mode :
Enhancement
Surface Mount :
No
Transistor Type :
1 N-Channel
FET Feature :
--
Power Dissipation-Max (Abs) :
50 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Case Connection :
DRAIN
Width :
4.83 mm
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXTP08
Continuous Drain Current (ID) :
800mA
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
1.8A
Rise Time :
26 ns
Published :
2008
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Lead Free :
Lead Free
JESD-609 Code :
e1
Pbfree Code :
yes
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
1200V
Product Category :
MOSFET
FET Type :
N-Channel
Number of Terminals :
3
Reach Compliance Code :
Compliant
Brand :
IXYS
Power Dissipation (Max) :
50W (Tc)
Drain-source On Resistance-Max :
25 Ω
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Height :
9.15 mm
JEDEC-95 Code :
TO-220AB
Number of Channels :
1 Channel
Terminal Position :
Single
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-220-3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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