IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection :
DRAIN
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
1200V
Power Dissipation-Max (Abs) :
50 W
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Transistor Polarity :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Pulsed Drain Current-Max (IDM) :
1.8A
Supplier Device Package :
TO-220AB
Terminal Position :
Single
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
Rise Time :
26 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Series :
Polar™
Continuous Drain Current (ID) :
800mA
JESD-30 Code :
R-PSFM-T3
Product Category :
MOSFET
Packaging :
Tube
Mount :
Through Hole
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
RoHS :
Details
Brand :
IXYS
DS Breakdown Voltage-Min :
1200V
Number of Terminations :
3
Number of Terminals :
3
Number of Pins :
3
Factory Lead Time :
24 Weeks
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
25 Ω
Product Status :
Active
FET Feature :
--
Width :
4.83 mm
Length :
10.66 mm
Height :
9.15 mm
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Package :
Tube
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Power Dissipation (Max) :
50W (Tc)
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2008
JEDEC-95 Code :
TO-220AB
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
0.8A
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXTP08
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
80 mJ
Power Dissipation-Max :
50W Tc
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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