IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation (Max) :
50W (Tc)
Supplier Device Package :
TO-220AB
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
DS Breakdown Voltage-Min :
1200V
Terminal Position :
Single
Package :
Tube
Height :
9.15 mm
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
0.8A
Drain to Source Voltage (Vdss) :
1200V
Reach Compliance Code :
Compliant
Mount :
Through Hole
Drain-source On Resistance-Max :
25 Ω
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
50 W
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
1.8A
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Surface Mount :
No
ECCN Code :
EAR99
Transistor Type :
1 N-Channel
Package / Case :
TO-220-3
Factory Lead Time :
24 Weeks
Base Product Number :
IXTP08
Number of Elements :
1
RoHS :
Details
Continuous Drain Current (ID) :
800mA
Pin Count :
3
Transistor Application :
SWITCHING
Published :
2008
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Width :
4.83 mm
Mounting Style :
Through Hole
JESD-609 Code :
e1
Rise Time :
26 ns
Additional Feature :
AVALANCHE RATED
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
80 mJ
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Number of Terminations :
3
Brand :
IXYS
Length :
10.66 mm
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Lead Free :
Lead Free
FET Feature :
--
Power Dissipation-Max :
50W Tc
Terminal Form :
THROUGH-HOLE
Series :
Polar™
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, Number of Terminations:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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