IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Package :
Tube
JEDEC-95 Code :
TO-220AB
Continuous Drain Current (ID) :
800mA
Rise Time :
26 ns
Additional Feature :
AVALANCHE RATED
Published :
2008
Pin Count :
3
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
0.8A
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
1200V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Product Status :
Active
Number of Terminations :
3
Number of Channels :
1 Channel
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e1
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Series :
Polar™
Package / Case :
TO-220-3
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
25 Ω
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Brand :
IXYS
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
1.8A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Maximum Operating Temperature :
+ 150 C
Width :
4.83 mm
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
FET Feature :
--
ECCN Code :
EAR99
Product Category :
MOSFET
Power Dissipation-Max :
50W Tc
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
80 mJ
Drain to Source Voltage (Vdss) :
1200V
Base Product Number :
IXTP08
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
10.66 mm
Product Type :
MOSFET
Case Connection :
DRAIN
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max (Abs) :
50 W
Lead Free :
Lead Free
Factory Lead Time :
24 Weeks
Height :
9.15 mm
Mounting Type :
Through Hole
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Terminal Position :
Single
Packaging :
Tube
Power Dissipation (Max) :
50W (Tc)
Supplier Device Package :
TO-220AB
Channel Mode :
Enhancement
Number of Pins :
3
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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