IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
80 mJ
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Number of Terminations :
3
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rise Time :
26 ns
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
1200V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
RoHS :
Details
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
1200V
Width :
4.83 mm
JEDEC-95 Code :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Number of Terminals :
3
Lead Free :
Lead Free
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Drain-source On Resistance-Max :
25 Ω
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Length :
10.66 mm
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
50W (Tc)
Drain Current-Max (Abs) (ID) :
0.8A
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Factory Lead Time :
24 Weeks
Height :
9.15 mm
Channel Mode :
Enhancement
Mount :
Through Hole
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
1.8A
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Series :
Polar™
Continuous Drain Current (ID) :
800mA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-220-3
Product Type :
MOSFET
Product Category :
MOSFET
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
50 W
Pin Count :
3
Transistor Element Material :
SILICON
Base Product Number :
IXTP08
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Number of Pins :
3
FET Feature :
--
Transistor Application :
SWITCHING
Pbfree Code :
yes
Published :
2008
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
50W Tc
Supplier Device Package :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Polarity/Channel Type :
N-Channel
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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