IXTP08N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTP08

Lead Free :

Lead Free

Channel Mode :

Enhancement

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

0.8A

Power Dissipation-Max :

50W Tc

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

1.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e1

Published :

2008

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

25 Ω @ 500mA, 10V

Supplier Device Package :

TO-220AB

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Pin Count :

3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Drain to Source Voltage (Vdss) :

1200V

Power Dissipation-Max (Abs) :

50 W

Product Status :

Active

Rise Time :

26 ns

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Package :

Tube

Mount :

Through Hole

Pbfree Code :

yes

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Height :

9.15 mm

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

333pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

1200V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Length :

10.66 mm

Case Connection :

DRAIN

Series :

Polar™

Product Category :

MOSFET

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

800mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.83 mm

Surface Mount :

No

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

24 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Feature :

--

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Power Dissipation (Max) :

50W (Tc)

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

25 Ω

Avalanche Energy Rating (Eas) :

80 mJ

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED