IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Base Product Number :
- IXTP08
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- FET Feature :
- --
- Brand :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 50W Tc
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 1200V
- FET Type :
- N-Channel
- Product Status :
- Active
- Published :
- 2008
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Factory Lead Time :
- 24 Weeks
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 50 W
- Width :
- 4.83 mm
- Power Dissipation (Max) :
- 50W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Rise Time :
- 26 ns
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 800mA
- Length :
- 10.66 mm
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Height :
- 9.15 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Drain-source On Resistance-Max :
- 25 Ω
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- Polar™
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 1200V
- Supplier Device Package :
- TO-220AB
- RoHS :
- Details
- Datasheets
- IXTP08N120P

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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