IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 80 mJ
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rise Time :
- 26 ns
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 1200V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 1200V
- Width :
- 4.83 mm
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Drain-source On Resistance-Max :
- 25 Ω
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Length :
- 10.66 mm
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 50W (Tc)
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Factory Lead Time :
- 24 Weeks
- Height :
- 9.15 mm
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Series :
- Polar™
- Continuous Drain Current (ID) :
- 800mA
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 50 W
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXTP08
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Number of Pins :
- 3
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Published :
- 2008
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 50W Tc
- Supplier Device Package :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTP08N120P

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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