IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Package Shape :
RECTANGULAR
Power Dissipation-Max :
50W Tc
Base Product Number :
IXTP08
Vgs (Max) :
±20V
Pin Count :
3
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
50W (Tc)
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
24 Weeks
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4.5V @ 50μA
JEDEC-95 Code :
TO-220AB
Pbfree Code :
yes
Product Category :
MOSFET
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
50 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Product Type :
MOSFET
Rise Time :
26 ns
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
1200V
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
800mA
Package :
Tube
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
1200V
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
Published :
2008
Pulsed Drain Current-Max (IDM) :
1.8A
Drain-source On Resistance-Max :
25 Ω
Transistor Application :
SWITCHING
Length :
10.66 mm
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
Polar™
RoHS :
Details
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Height :
9.15 mm
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Width :
4.83 mm
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Avalanche Energy Rating (Eas) :
80 mJ
Packaging :
Tube
JESD-609 Code :
e1
FET Feature :
--
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
0.8A
Product Status :
Active
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Supplier Device Package :
TO-220AB
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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