IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
0.8A
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXTP08
Series :
Polar™
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Terminal Form :
THROUGH-HOLE
Lead Free :
Lead Free
FET Type :
N-Channel
Height :
9.15 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Manufacturer :
IXYS
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Pulsed Drain Current-Max (IDM) :
1.8A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Status :
Active
JESD-609 Code :
e1
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Surface Mount :
No
Case Connection :
DRAIN
Factory Lead Time :
24 Weeks
Continuous Drain Current (ID) :
800mA
Power Dissipation (Max) :
50W (Tc)
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
1200V
Channel Mode :
Enhancement
Terminal Position :
Single
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Rise Time :
26 ns
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Length :
10.66 mm
Number of Elements :
1
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Pin Count :
3
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Published :
2008
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
80 mJ
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Style :
Through Hole
Product Category :
MOSFET
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
1200V
Width :
4.83 mm
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
25 Ω
Supplier Device Package :
TO-220AB
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
50 W
Power Dissipation-Max :
50W Tc
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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