IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Package / Case :
TO-220-3
Width :
4.83 mm
Power Dissipation-Max :
50W Tc
DS Breakdown Voltage-Min :
1200V
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Drain to Source Voltage (Vdss) :
1200V
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Channel Mode :
Enhancement
Surface Mount :
No
Number of Terminals :
3
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
0.8A
Continuous Drain Current (ID) :
800mA
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Published :
2008
Transistor Type :
1 N-Channel
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
10.66 mm
Series :
Polar™
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Factory Lead Time :
24 Weeks
Number of Elements :
1
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
1.8A
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
26 ns
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Package :
Tube
Height :
9.15 mm
JESD-609 Code :
e1
Minimum Operating Temperature :
- 55 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
FET Feature :
--
Mounting Type :
Through Hole
Pbfree Code :
yes
Qualification Status :
Not Qualified
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Supplier Device Package :
TO-220AB
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
25 Ω
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Power Dissipation (Max) :
50W (Tc)
Avalanche Energy Rating (Eas) :
80 mJ
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXTP08
Power Dissipation-Max (Abs) :
50 W
FET Type :
N-Channel
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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