IXTP8N50P

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Mfr.Part #
IXTP8N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220AB
Stock
17,287
In Stock :
17,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.8Ohm
Continuous Drain Current (ID) :
8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Series :
PolarHV™
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Product Status :
Obsolete
Current Rating :
8A
Terminal Finish :
Matte Tin (Sn)
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Published :
2006
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS Corporation
Pulsed Drain Current-Max (IDM) :
14A
FET Type :
N-Channel
Package :
Tube
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Power Dissipation :
150W
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Power Dissipation-Max :
150W Tc
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Pin Count :
3
Number of Elements :
1
Terminal Position :
Single
Rise Time :
28ns
Gate to Source Voltage (Vgs) :
30V
JESD-609 Code :
e3
Packaging :
Tube
Pbfree Code :
yes
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
500V
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
800m Ω @ 4A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Voltage - Rated DC :
500V
Package / Case :
TO-220-3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Fall Time (Typ) :
23 ns
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
8A
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
500 V
JEDEC-95 Code :
TO-220AB
Polarity/Channel Type :
N-Channel
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
65 ns
Base Product Number :
IXTP8
Avalanche Energy Rating (Eas) :
400 mJ
Power Dissipation (Max) :
150W (Tc)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, IXTP8N50P pinout, IXTP8N50P datasheet PDF, IXTP8N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP8N50P


N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3

IXTP8N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP8N50P Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)


IXTP8N50P Applications


There are a lot of IXYS
IXTP8N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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