IXTP8N50P
- Mfr.Part #
- IXTP8N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO220AB
- Stock
- 17,287
- In Stock :
- 17,287
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 8A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- DS Breakdown Voltage-Min :
- 500 V
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Pin Count :
- 3
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 65 ns
- Series :
- PolarHV™
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 150W (Tc)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Fall Time (Typ) :
- 23 ns
- Current Rating :
- 8A
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 8A
- Manufacturer :
- IXYS Corporation
- Base Product Number :
- IXTP8
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Drain-source On Resistance-Max :
- 0.8Ohm
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Power Dissipation :
- 150W
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 14A
- Rise Time :
- 28ns
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 150W Tc
- Published :
- 2006
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- TO-220AB
- Datasheets
- IXTP8N50P

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3
IXTP8N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP8N50P Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)
IXTP8N50P Applications
There are a lot of IXYS
IXTP8N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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