IXTP76N25T
- Mfr.Part #
- IXTP76N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 76A TO220AB
- Stock
- 47,739
- In Stock :
- 47,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTP76
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-220AB
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Factory Lead Time :
- 26 Weeks
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 460W (Tc)
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e1
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 29 ns
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 170A
- Turn-Off Delay Time :
- 56 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 250 V
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Tradename :
- HiPerFET
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Power Dissipation-Max :
- 460W Tc
- Vgs (Max) :
- ±30V
- Surface Mount :
- No
- Published :
- 2007
- Pbfree Code :
- yes
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Rise Time :
- 25ns
- Drain-source On Resistance-Max :
- 0.039Ohm
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 76A
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Power Dissipation-Max (Abs) :
- 460 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 250V
- Mounting Style :
- Through Hole
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 250V
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 76 A
- Configuration :
- Single
- Power Dissipation :
- 460W
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- IXTP76N25T

N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3
IXTP76N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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