IXTP75N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

75A

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Finish :

Matte Tin (Sn)

RoHS :

Details

Power Dissipation-Max :

360W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Case Connection :

DRAIN

Tradename :

PolarHT

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Type :

PolarHT Power MOSFET

Gate to Source Voltage (Vgs) :

20V

Width :

4.83 mm

Manufacturer :

IXYS

Number of Channels :

1

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Mount :

Through Hole

Qualification :

-

Channel Type :

N

Transistor Element Material :

SILICON

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Package :

Tube

Number of Terminations :

3

Radiation Hardening :

No

Height :

9.15mm

Resistance :

25mOhm

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.025 Ω

Avalanche Energy Rating (Eas) :

1000 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements per Chip :

1

Number of Terminals :

3

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Threshold Voltage :

5.5V

Subcategory :

MOSFETs

Turn On Delay Time :

27 ns

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

200A

FET Feature :

--

Turn-Off Delay Time :

66 ns

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXTP75

Minimum Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Series :

PolarHT™

Maximum Operating Temperature :

+175 °C

Length :

10.66 mm

Drain to Source Voltage (Vdss) :

100V

Configuration :

Single

Product Type :

MOSFET

Number of Pins :

3

Fall Time (Typ) :

45 ns

Rise Time :

53ns

Supplier Device Package :

TO-220AB

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Package Type :

TO-220

Published :

2004

Polarity/Channel Type :

N-Channel

Factory Lead Time :

24 Weeks

Mounting Type :

Through Hole

Power Dissipation (Max) :

360W (Tc)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

360W

Product Status :

Active

Continuous Drain Current (ID) :

75A

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Brand :

IXYS

Package / Case :

TO-220-3

Lead Free :

Lead Free

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-609 Code :

e3

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

MSL :

-

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Terminal Position :

Single

DS Breakdown Voltage-Min :

100 V

Element Configuration :

Single

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Packaging :

Tube

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3