IXTP6N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Drain to Source Voltage (Vdss) :

500V

Power Dissipation (Max) :

100W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

No

Number of Terminals :

3

Mount :

Through Hole

Power Dissipation :

100W

Voltage - Rated DC :

500V

Drain to Source Resistance :

1.1Ohm

Input Capacitance :

740pF

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Fall Time (Typ) :

26 ns

FET Feature :

--

Published :

2006

Product Status :

Obsolete

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Factory Lead Time :

8 Weeks

Pulsed Drain Current-Max (IDM) :

15 A

Turn-Off Delay Time :

65 ns

Base Product Number :

IXTP6

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 50μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

100W Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Terminal Position :

Single

Lead Free :

Lead Free

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

6A

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

1.1 Ω

Pin Count :

3

Element Configuration :

Single

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Rise Time :

28ns

Number of Elements :

1

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

1.1Ohm @ 3A, 10V

Manufacturer :

IXYS Corporation

Number of Pins :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On Max :

1.1 Ω

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-220AB

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

14.6nC @ 10V

Drain to Source Breakdown Voltage :

500V

Current Rating :

6A

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

250 mJ

Series :

PolarHV™