IXTP60N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain to Source Resistance :

32 mΩ

Operating Mode :

ENHANCEMENT MODE

Channel Mode :

Enhancement

Power Dissipation (Max) :

500W (Tc)

Mount :

Through Hole

Drain-source On Resistance-Max :

0.04Ohm

Product Category :

MOSFET

Rds On Max :

40 mΩ

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Packaging :

Tube

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

150A

Vgs (Max) :

±20V

Input Capacitance :

4.53 nF

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

60 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Mounting Type :

Through Hole

Tradename :

HiPerFET

Power Dissipation :

500W

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTP60

Surface Mount :

No

Continuous Drain Current (ID) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

200 V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

700 mJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

500W Tc

Rise Time :

13 ns

Terminal Form :

THROUGH-HOLE

Max Operating Temperature :

175 °C

Maximum Operating Temperature :

+ 175 C

Number of Terminals :

3

Max Power Dissipation :

500 W

Operating Temperature :

-55°C~175°C TJ

Published :

2010

Series :

Trench™

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

200V

Supplier Device Package :

TO-220AB

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Reach Compliance Code :

Unknown

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

200V

Terminal Position :

Single

Package :

Tube

Rds On (Max) @ Id, Vgs :

40m Ω @ 30A, 10V

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

FET Feature :

--

Power Dissipation-Max (Abs) :

500 W

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Package / Case :

TO-220-3

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4530pF @ 25V