IXTP60N10T
- Mfr.Part #
- IXTP60N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO220AB
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 24 Weeks
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 40ns
- Maximum Operating Temperature :
- + 175 C
- Series :
- TrenchMV™
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Published :
- 2008
- Continuous Drain Current (ID) :
- 60A
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Resistance :
- 18mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 43 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2650pF @ 25V
- Drain to Source Breakdown Voltage :
- 100V
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Channel Mode :
- Enhancement
- Width :
- 4.82 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.018 Ω
- Package / Case :
- TO-220-3
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Height :
- 9.15 mm
- Pin Count :
- 3
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Lead Free :
- Lead Free
- Tradename :
- HiPerFET
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 10.66 mm
- Number of Elements :
- 1
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 176W Tc
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 25A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Drain Current-Max (Abs) (ID) :
- 60 A
- Surface Mount :
- No
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 176W (Tc)
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 176 W
- Package :
- Tube
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-220AB
- Base Product Number :
- IXTP60
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 100 V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 37 ns
- Power Dissipation :
- 176W
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 180 A
- Datasheets
- IXTP60N10T

N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-220-3
IXTP60N10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 60 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP60N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 180 A.
a 100V drain to source voltage (Vdss)
IXTP60N10T Applications
There are a lot of IXYS
IXTP60N10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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