IXTP60N10T

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Mfr.Part #
IXTP60N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO220AB
Stock
50
In Stock :
50

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
24 Weeks
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Rise Time :
40ns
Maximum Operating Temperature :
+ 175 C
Series :
TrenchMV™
ECCN Code :
EAR99
Mounting Type :
Through Hole
Published :
2008
Continuous Drain Current (ID) :
60A
Qualification Status :
Not Qualified
Packaging :
Tube
Transistor Element Material :
SILICON
Resistance :
18mOhm
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
43 ns
Input Capacitance (Ciss) (Max) @ Vds :
2650pF @ 25V
Drain to Source Breakdown Voltage :
100V
RoHS :
Details
Avalanche Energy Rating (Eas) :
500 mJ
Channel Mode :
Enhancement
Width :
4.82 mm
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Pbfree Code :
yes
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.018 Ω
Package / Case :
TO-220-3
Number of Channels :
1 Channel
Product Category :
MOSFET
Height :
9.15 mm
Pin Count :
3
Configuration :
Single
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Lead Free :
Lead Free
Tradename :
HiPerFET
Terminal Finish :
Matte Tin (Sn)
Length :
10.66 mm
Number of Elements :
1
Brand :
IXYS
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
176W Tc
Rds On (Max) @ Id, Vgs :
18m Ω @ 25A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
100V
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
60 A
Surface Mount :
No
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±30V
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Power Dissipation (Max) :
176W (Tc)
Product Status :
Active
Power Dissipation-Max (Abs) :
176 W
Package :
Tube
Element Configuration :
Single
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Supplier Device Package :
TO-220AB
Base Product Number :
IXTP60
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
60A Tc
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
JEDEC-95 Code :
TO-220AB
FET Feature :
--
DS Breakdown Voltage-Min :
100 V
Number of Pins :
3
Fall Time (Typ) :
37 ns
Power Dissipation :
176W
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
180 A
Datasheets
IXTP60N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP60N10T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IXTP60N10T pinout, IXTP60N10T datasheet PDF, IXTP60N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP60N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP60N10T


N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-220-3

IXTP60N10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 60 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTP60N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 180 A.
a 100V drain to source voltage (Vdss)


IXTP60N10T Applications


There are a lot of IXYS
IXTP60N10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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