IXTP5N60P
- Mfr.Part #
- IXTP5N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO220AB
- Stock
- 25,660
- In Stock :
- 25,660
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2006
- Voltage - Rated DC :
- 600V
- Fall Time (Typ) :
- 17 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 100W Tc
- Packaging :
- Tube
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 1.7 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 5A
- Gate Charge (Qg) (Max) @ Vgs :
- 14.2nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 2.5A, 10V
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Reach Compliance Code :
- Compliant
- Rise Time :
- 24ns
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 100W
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- PolarHV™
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-220AB
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Drain Current-Max (Abs) (ID) :
- 5A
- Base Product Number :
- IXTP5
- Current Rating :
- 5A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 55 ns
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 100W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS Corporation
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- DS Breakdown Voltage-Min :
- 600 V
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Position :
- Single
- Datasheets
- IXTP5N60P

N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-220-3
IXTP5N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The maximum input capacitance of this device is 750pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP5N60P Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTP5N60P Applications
There are a lot of IXYS
IXTP5N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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