IXTP55N075T

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Mfr.Part #
IXTP55N075T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 55A TO220AB
Stock
22,526
In Stock :
22,526

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-220AB
Package :
Tube
Qualification Status :
Not Qualified
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Manufacturer :
IXYS Corporation
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Power Dissipation (Max) :
130W (Tc)
Drain Current-Max (Abs) (ID) :
50A
Continuous Drain Current (ID) :
55A
Power Dissipation-Max :
130W Tc
FET Type :
N-Channel
Published :
2006
Power Dissipation :
130W
Terminal Finish :
Matte Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
DS Breakdown Voltage-Min :
85 V
Rds On (Max) @ Id, Vgs :
19.5m Ω @ 27.5A, 10V
FET Feature :
--
Mount :
Through Hole
Series :
TrenchMV™
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
ECCN Code :
EAR99
Pin Count :
3
Number of Elements :
1
Transistor Application :
SWITCHING
Base Product Number :
IXTP55
Drain-source On Resistance-Max :
0.023 Ω
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Vgs(th) (Max) @ Id :
4V @ 25μA
Pulsed Drain Current-Max (IDM) :
130 A
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
250 mJ
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Turn-Off Delay Time :
44 ns
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
75V
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Drain to Source Breakdown Voltage :
75V
Rise Time :
50ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Obsolete
Vgs (Max) :
±20V
Fall Time (Typ) :
41 ns
JESD-609 Code :
e3
Packaging :
Tube
Package Shape :
RECTANGULAR
Datasheets
IXTP55N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP55N075T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXTP55N075T pinout, IXTP55N075T datasheet PDF, IXTP55N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP55N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP55N075T


N-Channel Tube 19.5m Ω @ 27.5A, 10V ±20V 1400pF @ 25V 33nC @ 10V 75V TO-220-3

IXTP55N075T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 1400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 130 A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 75V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP55N075T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 130 A.
a 75V drain to source voltage (Vdss)


IXTP55N075T Applications


There are a lot of IXYS
IXTP55N075T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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