IXTP50N20PM

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Mfr.Part #
IXTP50N20PM
Manufacturer
Littelfuse
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 200V 20A TO220
Stock
16,538
In Stock :
16,538

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Rise Time :
35ns
Qualification Status :
Not Qualified
FET Feature :
--
Pin Count :
3
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
20 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
DS Breakdown Voltage-Min :
200 V
Turn-Off Delay Time :
70 ns
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max (Abs) :
90 W
Element Configuration :
Single
Fall Time (Typ) :
30 ns
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Power Dissipation-Max :
90W Tc
Product Status :
Active
Transistor Element Material :
SILICON
Base Product Number :
IXTP50
Polarity/Channel Type :
N-Channel
Height :
9.15 mm
Supplier Device Package :
TO-220 Isolated Tab
Power Dissipation :
90W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
Rds On (Max) @ Id, Vgs :
60m Ω @ 25A, 10V
Drain-source On Resistance-Max :
0.06Ohm
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Package :
Tube
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Published :
2008
Brand :
IXYS
Manufacturer :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
90W (Tc)
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
Length :
10.66 mm
Mounting Style :
Through Hole
Configuration :
Single
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
120 A
Number of Channels :
1 Channel
RoHS :
Details
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±20V
Width :
4.83 mm
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
Terminal Position :
Single
Mount :
Through Hole
Number of Terminals :
3
Case Connection :
Isolated
Packaging :
Tube
Maximum Operating Temperature :
+ 175 C
Factory Lead Time :
24 Weeks
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
200V
Surface Mount :
No
Number of Elements :
1
Continuous Drain Current (ID) :
20A
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
1000 mJ
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Channel Mode :
Enhancement
Product Category :
MOSFET
Series :
PolarHT™
Datasheets
IXTP50N20PM
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP50N20PM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXTP50N20PM pinout, IXTP50N20PM datasheet PDF, IXTP50N20PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP50N20PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP50N20PM


N-Channel Tube 60m Ω @ 25A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab

IXTP50N20PM Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2720pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 20 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 120 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP50N20PM Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120 A.
a 200V drain to source voltage (Vdss)


IXTP50N20PM Applications


There are a lot of IXYS
IXTP50N20PM applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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