IXTP50N20PM
- Mfr.Part #
- IXTP50N20PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 20A TO220
- Stock
- 16,538
- In Stock :
- 16,538
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Rise Time :
- 35ns
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 20 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- DS Breakdown Voltage-Min :
- 200 V
- Turn-Off Delay Time :
- 70 ns
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max (Abs) :
- 90 W
- Element Configuration :
- Single
- Fall Time (Typ) :
- 30 ns
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 90W Tc
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXTP50
- Polarity/Channel Type :
- N-Channel
- Height :
- 9.15 mm
- Supplier Device Package :
- TO-220 Isolated Tab
- Power Dissipation :
- 90W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Drain-source On Resistance-Max :
- 0.06Ohm
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Published :
- 2008
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 90W (Tc)
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 10.66 mm
- Mounting Style :
- Through Hole
- Configuration :
- Single
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 120 A
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Width :
- 4.83 mm
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Case Connection :
- Isolated
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 175 C
- Factory Lead Time :
- 24 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 200V
- Surface Mount :
- No
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 20A
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Series :
- PolarHT™
- Datasheets
- IXTP50N20PM

N-Channel Tube 60m Ω @ 25A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IXTP50N20PM Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2720pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 20 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 120 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP50N20PM Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120 A.
a 200V drain to source voltage (Vdss)
IXTP50N20PM Applications
There are a lot of IXYS
IXTP50N20PM applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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