IXTP50N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Number of Pins :

3

Qualification :

-

Length :

10.66mm

Mounting Style :

Through Hole

Published :

2008

Pbfree Code :

yes

Manufacturer :

IXYS

ECCN Code :

EAR99

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Brand :

IXYS

FET Type :

N-Channel

Configuration :

Single

Element Configuration :

Single

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

200V

Product Category :

MOSFET

Terminal Position :

Single

Surface Mount :

No

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

60m Ω @ 50A, 10V

Avalanche Energy Rating (Eas) :

1000 mJ

Drain Current-Max (Abs) (ID) :

50 A

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Continuous Drain Current (ID) :

50A

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

DS Breakdown Voltage-Min :

200 V

Package :

Tube

RoHS :

Details

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Width :

4.83mm

FET Feature :

--

Product Status :

Active

Factory Lead Time :

24 Weeks

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2720pF @ 25V

Rise Time :

35ns

Transistor Element Material :

SILICON

Continuous Drain Current Id :

50A

Minimum Operating Temperature :

-55 °C

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements per Chip :

1

Channel Type :

N

Number of Elements :

1

Fall Time (Typ) :

30 ns

Power Dissipation :

360W

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

360W (Tc)

Pulsed Drain Current-Max (IDM) :

120A

Turn-Off Delay Time :

70 ns

Number of Terminals :

3

Base Product Number :

IXTP50

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Series :

PolarHT™

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Package Type :

TO-220

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+175 °C

Qualification Status :

Not Qualified

Power Dissipation-Max :

360W Tc

Power Dissipation-Max (Abs) :

360 W

JESD-609 Code :

e3

Height :

9.15mm

Drain to Source Breakdown Voltage :

200V

Turn On Delay Time :

26 ns

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.06Ohm

Terminal Form :

THROUGH-HOLE