IXTP4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

800V

Drain-source On Resistance-Max :

3.4 Ω

Number of Channels :

1 Channel

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Element Configuration :

Single

Max Power Dissipation :

100 W

Length :

10.66 mm

Pulsed Drain Current-Max (IDM) :

8A

FET Feature :

--

REACH SVHC :

No SVHC

Pin Count :

3

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Base Product Number :

IXTP4

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

100W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

250 mJ

Number of Terminations :

3

Min Operating Temperature :

-55 °C

Input Capacitance :

750 pF

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

800 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Vgs (Max) :

±30V

Mounting Style :

Through Hole

Configuration :

Single

Case Connection :

DRAIN

Subcategory :

MOSFETs

Factory Lead Time :

24 Weeks

Rise Time :

24ns

Transistor Type :

1 N-Channel

Terminal Position :

Single

Rds On Max :

3.4 Ω

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Height :

9.15 mm

Drain to Source Resistance :

3 Ω

Continuous Drain Current (ID) :

3.6A

Number of Terminals :

3

Operating Mode :

ENHANCEMENT MODE

RoHS :

Compliant

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

800 V

Product Category :

MOSFET

Series :

PolarHV™

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Turn-Off Delay Time :

60 ns

Channel Mode :

Enhancement

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

Pbfree Code :

yes

Threshold Voltage :

5.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

29 ns

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Product Type :

MOSFET

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

100W

Width :

4.82 mm

Published :

2004

Reach Compliance Code :

Compliant

Surface Mount :

No