IXTP4N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Current Rating :

4A

Terminal Position :

Single

Base Product Number :

IXTP4

Published :

2006

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

89W

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

50 ns

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

10ns

Pulsed Drain Current-Max (IDM) :

10A

Power Dissipation (Max) :

89W (Tc)

Drain Current-Max (Abs) (ID) :

4A

Avalanche Energy Rating (Eas) :

150 mJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drain to Source Voltage (Vdss) :

600V

Case Connection :

DRAIN

Manufacturer :

IXYS Corporation

Drain-source On Resistance-Max :

2Ohm

Number of Elements :

1

FET Feature :

--

DS Breakdown Voltage-Min :

600 V

Voltage - Rated DC :

600V

Number of Terminals :

3

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4A

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Series :

PolarHV™

Power Dissipation-Max :

89W Tc

Packaging :

Tube

Mounting Type :

Through Hole

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Obsolete

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

600V

Supplier Device Package :

TO-220AB

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 25V

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Pin Count :

3

Pbfree Code :

yes