IXTP450P2

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Mfr.Part #
IXTP450P2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
3,847
In Stock :
3,847

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Published :
2011
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
RoHS :
Details
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
300W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Number of Terminals :
3
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
Radiation Hardening :
No
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Brand :
IXYS
Series :
PolarP2™
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
FET Feature :
--
Drain Current-Max (Abs) (ID) :
16 A
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
Tradename :
Polar2 HiPerFET
Type :
PolarP2 Power MOSFET
Packaging :
Tube
Terminal Position :
Single
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Pbfree Code :
yes
Base Product Number :
IXTP450
Power Dissipation :
300W
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Pin Count :
3
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Pulsed Drain Current-Max (IDM) :
35 A
Drain-source On Resistance-Max :
0.33 Ω
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Transistor Polarity :
N-Channel
Package :
Tube
Number of Elements :
1
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
Factory Lead Time :
24 Weeks
JEDEC-95 Code :
TO-220AB
Avalanche Energy Rating (Eas) :
750 mJ
Drain to Source Breakdown Voltage :
500V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Terminations :
3
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max (Abs) :
300 W
DS Breakdown Voltage-Min :
500 V
Continuous Drain Current (ID) :
16A
Drain to Source Voltage (Vdss) :
500V
Lead Free :
Lead Free
Manufacturer :
IXYS
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Supplier Device Package :
TO-220AB
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Type:PolarP2 Power MOSFET, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP450P2 pinout, IXTP450P2 datasheet PDF, IXTP450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3

IXTP450P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXTP450P2 Applications


There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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