IXTP450P2
- Mfr.Part #
- IXTP450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 3,847
- In Stock :
- 3,847
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-220AB
- Lead Free :
- Lead Free
- Factory Lead Time :
- 24 Weeks
- Brand :
- IXYS
- RoHS :
- Details
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 300W
- Element Configuration :
- Single
- Package :
- Tube
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Power Dissipation-Max :
- 300W Tc
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 16 A
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2011
- DS Breakdown Voltage-Min :
- 500 V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Channel Mode :
- Enhancement
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 300 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Tradename :
- Polar2 HiPerFET
- Base Product Number :
- IXTP450
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 300W (Tc)
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-220AB
- Series :
- PolarP2™
- Continuous Drain Current (ID) :
- 16A
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Type :
- PolarP2 Power MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.33 Ω
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Datasheets
- IXTP450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3
IXTP450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXTP450P2 Applications
There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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