IXTP450P2

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Mfr.Part #
IXTP450P2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
3,847
In Stock :
3,847

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-220AB
Lead Free :
Lead Free
Factory Lead Time :
24 Weeks
Brand :
IXYS
RoHS :
Details
Number of Elements :
1
FET Type :
N-Channel
Manufacturer :
IXYS
Number of Terminals :
3
Number of Channels :
1 Channel
Power Dissipation :
300W
Element Configuration :
Single
Package :
Tube
Pbfree Code :
yes
Number of Pins :
3
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
FET Feature :
--
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Power Dissipation-Max :
300W Tc
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
16 A
JESD-30 Code :
R-PSFM-T3
Published :
2011
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Drain to Source Voltage (Vdss) :
500V
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
500V
Channel Mode :
Enhancement
Pin Count :
3
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
300 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
Case Connection :
DRAIN
Mount :
Through Hole
Tradename :
Polar2 HiPerFET
Base Product Number :
IXTP450
Mounting Type :
Through Hole
Power Dissipation (Max) :
300W (Tc)
Product Type :
MOSFET
JEDEC-95 Code :
TO-220AB
Series :
PolarP2™
Continuous Drain Current (ID) :
16A
Number of Terminations :
3
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Type :
PolarP2 Power MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
35 A
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.33 Ω
Avalanche Energy Rating (Eas) :
750 mJ
Datasheets
IXTP450P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Type:PolarP2 Power MOSFET, IXTP450P2 pinout, IXTP450P2 datasheet PDF, IXTP450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3

IXTP450P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXTP450P2 Applications


There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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