IXTP42N15T
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- Mfr.Part #
- IXTP42N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 42A TO220AB
- Stock
- 35,233
- In Stock ：
- 35,233
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-220AB
- Product Category :
- MOSFET
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 100A
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1880pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXTP42
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Package :
- Tube
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 42A
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 200W Tc
- Drain-source On Resistance-Max :
- 0.045Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- TrenchHV™
- FET Feature :
- --
- Brand :
- IXYS
- Reach Compliance Code :
- Unknown
- Published :
- 2008
- Tradename :
- HiPerFET
- Product Status :
- Active
- DS Breakdown Voltage-Min :
- 150V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 200W (Tc)
- Datasheets
- IXTP42N15T
N-Channel Tube 45m Ω @ 500mA, 10V ±30V 1880pF @ 25V 21nC @ 10V 150V TO-220-3
IXTP42N15T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1880pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 42A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP42N15T Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 42A
based on its rated peak drain current 100A.
a 150V drain to source voltage (Vdss)
IXTP42N15T Applications
There are a lot of IXYS
IXTP42N15T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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