IXTP3N60P

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Mfr.Part #
IXTP3N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO220AB
Stock
21
In Stock :
21

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Rise Time :
25ns
Turn-Off Delay Time :
58 ns
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
600V
JEDEC-95 Code :
TO-220AB
JESD-609 Code :
e3
Threshold Voltage :
5.5V
Product Status :
Obsolete
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
100 mJ
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max :
70W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2004
Pin Count :
3
Number of Terminals :
3
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
600V
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Supplier Device Package :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Factory Lead Time :
8 Weeks
Power Dissipation (Max) :
70W (Tc)
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Base Product Number :
IXTP3
Package / Case :
TO-220-3
Drain Current-Max (Abs) (ID) :
3A
Mount :
Through Hole
Drain-source On Resistance-Max :
2.9 Ω
Pulsed Drain Current-Max (IDM) :
6A
Series :
PolarHV™
Number of Elements :
1
Voltage - Rated DC :
600V
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Continuous Drain Current (ID) :
3A
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Manufacturer :
IXYS Corporation
Terminal Position :
Single
Current Rating :
3A
Fall Time (Typ) :
22 ns
Lead Free :
Lead Free
DS Breakdown Voltage-Min :
600 V
Pbfree Code :
yes
Transistor Application :
SWITCHING
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
70W
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
Datasheets
IXTP3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP3N60P pinout, IXTP3N60P datasheet PDF, IXTP3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-220-3

IXTP3N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXTP3N60P Applications


There are a lot of IXYS
IXTP3N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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