IXTP3N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Pin Count :

3

Min Operating Temperature :

-55 °C

Height :

9.15 mm

Element Configuration :

Single

Turn-Off Delay Time :

32 ns

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

1100 V

Published :

2003

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

3A

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Number of Terminations :

3

Terminal Position :

Single

Input Capacitance :

1.35 nF

Rise Time :

15ns

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Power Dissipation-Max :

150W Tc

Packaging :

Tube

Mounting Style :

Through Hole

Series :

--

Subcategory :

MOSFETs

Avalanche Energy Rating (Eas) :

700 mJ

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Width :

4.83 mm

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTP3

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.5A, 10V

Transistor Type :

1 N-Channel

Fall Time (Typ) :

18 ns

Product Status :

Active

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Drain to Source Resistance :

4 Ω

Product Category :

MOSFET

Configuration :

Single

Power Dissipation :

150W

Length :

10.66 mm

Drain to Source Breakdown Voltage :

1.1kV

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Pulsed Drain Current-Max (IDM) :

12A

Drain-source On Resistance-Max :

4Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Brand :

IXYS

Drain to Source Voltage (Vdss) :

1100V

Rds On Max :

4 Ω

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Supplier Device Package :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

150W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Max Operating Temperature :

150 °C

Mount :

Through Hole

Continuous Drain Current (ID) :

3A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS :

Compliant

Max Power Dissipation :

200 W