IXTP3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

125W

Min Operating Temperature :

-55 °C

Product Type :

MOSFET

Rise Time :

27ns

Height :

16 mm

Surface Mount :

No

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-220AB

Power Dissipation (Max) :

125W (Tc)

Number of Terminals :

3

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

3A

Type :

Polar Power MOSFET

DS Breakdown Voltage-Min :

1000 V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain-source On Resistance-Max :

4.8 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

RoHS :

Compliant

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Rds On Max :

4.8 Ω

Input Capacitance :

1.1 nF

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Drain to Source Resistance :

4.8 Ω

Base Product Number :

IXTP3

Power Dissipation-Max :

125W Tc

Terminal Position :

Single

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Tradename :

Polar

Avalanche Energy Rating (Eas) :

200 mJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max (Abs) :

125 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Max Power Dissipation :

125 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

24 Weeks

Configuration :

Single

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

75 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Brand :

IXYS

Mount :

Through Hole

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

6A

Fall Time (Typ) :

29 ns

Pin Count :

3

Package :

Tube

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Channel Mode :

Enhancement

Published :

2007

Width :

4.83 mm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Terminal Form :

THROUGH-HOLE

Series :

PolarVHV™

Max Operating Temperature :

150 °C

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

1kV

Product Status :

Active

FET Type :

N-Channel

Length :

10.66 mm

Packaging :

Tube

Number of Elements :

1

Transistor Application :

SWITCHING