IXTP32P20T
- Mfr.Part #
- IXTP32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO220AB
- Stock
- 3,593
- In Stock :
- 3,593
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Drain-source On Resistance-Max :
- 0.13Ohm
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 32A
- Transistor Polarity :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Factory Lead Time :
- 17 Weeks
- Maximum Operating Temperature :
- + 150 C
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Published :
- 2010
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- TrenchP™
- FET Type :
- P-Channel
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±15V
- Power Dissipation-Max :
- 300W Tc
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXTP32
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Product Status :
- Active
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 96A
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Transistor Type :
- 1 P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Datasheets
- IXTP32P20T

P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-220-3
IXTP32P20T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 96A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTP32P20T Applications
There are a lot of IXYS
IXTP32P20T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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