IXTP32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

RoHS :

Details

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

200W Tc

Series :

--

Power Dissipation (Max) :

200W (Tc)

Gate to Source Voltage (Vgs) :

20V

Base Product Number :

IXTP32

Fall Time (Typ) :

31 ns

Polarity/Channel Type :

N-Channel

Published :

2010

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Tradename :

HiPerFET

Maximum Operating Temperature :

+ 175 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Pin Count :

3

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Number of Terminations :

3

Drain-source On Resistance-Max :

0.072Ohm

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

72m Ω @ 16A, 10V

Width :

4.83 mm

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

200V

Additional Feature :

AVALANCHE RATED

Package :

Tube

Turn-Off Delay Time :

55 ns

Number of Terminals :

3

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Surface Mount :

No

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

200V

Height :

9.15 mm

Product Type :

MOSFET

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

200 V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Length :

10.66 mm

Power Dissipation :

200W

Package / Case :

TO-220-3

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

64A

Number of Elements :

1

Continuous Drain Current (ID) :

32A

Case Connection :

DRAIN

JESD-609 Code :

e1

Drain Current-Max (Abs) (ID) :

32 A

Supplier Device Package :

TO-220AB

Brand :

IXYS

Rise Time :

18ns

Qualification Status :

Not Qualified

Manufacturer :

IXYS

Mount :

Through Hole

Power Dissipation-Max (Abs) :

200 W

FET Type :

N-Channel