IXTP300N04T2
- Mfr.Part #
- IXTP300N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 300A TO220AB
- Stock
- 200
- In Stock :
- 200
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Series :
- TrenchT2™
- Power Dissipation-Max :
- 480W Tc
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 40V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 480W (Tc)
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 900A
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 17 Weeks
- Power Dissipation-Max (Abs) :
- 480 W
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 300A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 500mA, 10V
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Power Dissipation :
- 480W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Base Product Number :
- IXTP300
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 300 A
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Datasheets
- IXTP300N04T2

N-Channel Tube 2.5m Ω @ 500mA, 10V ±20V 10700pF @ 25V 145nC @ 10V 40V TO-220-3
IXTP300N04T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 300A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 300 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP300N04T2 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
IXTP300N04T2 Applications
There are a lot of IXYS
IXTP300N04T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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