IXTP300N04T2

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Mfr.Part #
IXTP300N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 300A TO220AB
Stock
200
In Stock :
200

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
600 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Series :
TrenchT2™
Power Dissipation-Max :
480W Tc
Packaging :
Tube
DS Breakdown Voltage-Min :
40V
Pin Count :
3
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
480W (Tc)
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
900A
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
10700pF @ 25V
Drain to Source Voltage (Vdss) :
40V
Factory Lead Time :
17 Weeks
Power Dissipation-Max (Abs) :
480 W
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Drain-source On Resistance-Max :
0.0025Ohm
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Continuous Drain Current (ID) :
300A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Published :
2008
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
RoHS :
Details
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Qualification Status :
Not Qualified
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
2.5m Ω @ 500mA, 10V
Number of Elements :
1
JESD-609 Code :
e1
Product Category :
MOSFET
Mount :
Through Hole
Number of Terminations :
3
Reach Compliance Code :
Compliant
Package :
Tube
Power Dissipation :
480W
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-220AB
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Base Product Number :
IXTP300
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
300 A
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Datasheets
IXTP300N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP300N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-220-3, Number of Terminations:3, IXTP300N04T2 pinout, IXTP300N04T2 datasheet PDF, IXTP300N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP300N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP300N04T2


N-Channel Tube 2.5m Ω @ 500mA, 10V ±20V 10700pF @ 25V 145nC @ 10V 40V TO-220-3

IXTP300N04T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 300A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 300 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP300N04T2 Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


IXTP300N04T2 Applications


There are a lot of IXYS
IXTP300N04T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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