IXTP2N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A Tc

DS Breakdown Voltage-Min :

800 V

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Number of Elements :

1

Vgs (Max) :

±30V

Power Dissipation :

70W

Series :

PolarHV™

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6 Ω @ 1A, 10V

Fall Time (Typ) :

28 ns

Drain-source On Resistance-Max :

6Ohm

JEDEC-95 Code :

TO-220AB

Power Dissipation (Max) :

70W (Tc)

Pbfree Code :

yes

Qualification Status :

Not Qualified

Rise Time :

35ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Surface Mount :

No

JESD-609 Code :

e3

FET Feature :

--

Mount :

Through Hole

Turn-Off Delay Time :

53 ns

Avalanche Energy Rating (Eas) :

100 mJ

Power Dissipation-Max :

70W Tc

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

4A

Product Status :

Obsolete

Manufacturer :

IXYS Corporation

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Single

Packaging :

Tube

Element Configuration :

Single

Drain to Source Breakdown Voltage :

800V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

2A

FET Type :

N-Channel

Number of Terminals :

3

Base Product Number :

IXTP2

Package :

Tube

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 10V

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800V

Published :

2006

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant