IXTP2N80P
- Mfr.Part #
- IXTP2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220AB
- Stock
- 47,581
- In Stock :
- 47,581
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 2A
- Number of Elements :
- 1
- Base Product Number :
- IXTP2
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Continuous Drain Current (ID) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 4A
- Rise Time :
- 35ns
- Supplier Device Package :
- TO-220AB
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 800V
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS Corporation
- Pin Count :
- 3
- Fall Time (Typ) :
- 28 ns
- Drain-source On Resistance-Max :
- 6Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Series :
- PolarHV™
- Drain to Source Voltage (Vdss) :
- 800V
- Product Status :
- Obsolete
- DS Breakdown Voltage-Min :
- 800 V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 70W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Packaging :
- Tube
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation (Max) :
- 70W (Tc)
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 53 ns
- Vgs (Max) :
- ±30V
- Published :
- 2006
- Datasheets
- IXTP2N80P
IXTP2N80P Documents

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-220-3
IXTP2N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 440pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)
IXTP2N80P Applications
There are a lot of IXYS
IXTP2N80P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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