IXTP2N80
- Mfr.Part #
- IXTP2N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220AB
- Stock
- 36,244
- In Stock :
- 36,244
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 8A
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 6.2 Ω @ 500mA, 10V
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 2A
- Drain-source On Resistance-Max :
- 6.2 Ω
- Published :
- 2003
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 2A
- Package / Case :
- TO-220-3
- Configuration :
- Single
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Max Power Dissipation :
- 54 W
- Height :
- 9.15 mm
- Supplier Device Package :
- TO-220AB
- Base Product Number :
- IXTP2
- Transistor Polarity :
- N-Channel
- Series :
- --
- Length :
- 10.66 mm
- Mount :
- Through Hole
- Rds On Max :
- 6.2 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 30 ns
- Drain to Source Resistance :
- 6.2 Ω
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 15 ns
- Pin Count :
- 3
- FET Type :
- N-Channel
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 54W Tc
- DS Breakdown Voltage-Min :
- 800 V
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Input Capacitance :
- 440 pF
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55 °C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Width :
- 4.82 mm
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 800V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Terminations :
- 3
- Power Dissipation :
- 54W
- Max Operating Temperature :
- 150 °C
- Rise Time :
- 18ns
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 54W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Datasheets
- IXTP2N80

N-Channel Tube 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-220-3
IXTP2N80 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 6.2 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP2N80 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)
IXTP2N80 Applications
There are a lot of IXYS
IXTP2N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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