IXTP2N100P
- Mfr.Part #
- IXTP2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO220AB
- Stock
- 130
- In Stock :
- 130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 2A
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 1kV
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2008
- Width :
- 4.83 mm
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 7.5 Ω
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 3
- Length :
- 10.66 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 86W
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- Height :
- 9.15 mm
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 1000 V
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Brand :
- IXYS
- FET Type :
- N-Channel
- Surface Mount :
- No
- Number of Elements :
- 1
- Configuration :
- Single
- Base Product Number :
- IXTP2
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 2A
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 86W Tc
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 27 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 17 Weeks
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- Turn-Off Delay Time :
- 80 ns
- Power Dissipation (Max) :
- 86W (Tc)
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 29ns
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Series :
- Polar™
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Drain to Source Voltage (Vdss) :
- 1000V
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max (Abs) :
- 86 W
- Supplier Device Package :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 5A
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTP2N100P
IXTP2N100P Documents

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-220-3
IXTP2N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.A device's maximum input capacitance is 655pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 5A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTP2N100P Applications
There are a lot of IXYS
IXTP2N100P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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