IXTP2N100P

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Mfr.Part #
IXTP2N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO220AB
Stock
130
In Stock :
130

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Continuous Drain Current (ID) :
2A
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
1kV
Terminal Form :
THROUGH-HOLE
Published :
2008
Width :
4.83 mm
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
7.5 Ω
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Length :
10.66 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Power Dissipation :
86W
Terminal Position :
Single
Package / Case :
TO-220-3
Height :
9.15 mm
Element Configuration :
Single
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
1000 V
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Lead Free :
Lead Free
Product Type :
MOSFET
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
FET Type :
N-Channel
Surface Mount :
No
Number of Elements :
1
Configuration :
Single
Base Product Number :
IXTP2
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
2A
Case Connection :
DRAIN
Power Dissipation-Max :
86W Tc
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
27 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
17 Weeks
Package :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 100μA
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 25V
Turn-Off Delay Time :
80 ns
Power Dissipation (Max) :
86W (Tc)
Mount :
Through Hole
Package Shape :
RECTANGULAR
RoHS :
Details
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
29ns
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Series :
Polar™
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
150 mJ
Drain to Source Voltage (Vdss) :
1000V
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max (Abs) :
86 W
Supplier Device Package :
TO-220AB
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
24.3nC @ 10V
Pulsed Drain Current-Max (IDM) :
5A
Vgs (Max) :
±20V
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTP2N100P pinout, IXTP2N100P datasheet PDF, IXTP2N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2N100P


N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-220-3

IXTP2N100P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.A device's maximum input capacitance is 655pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 5A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP2N100P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)


IXTP2N100P Applications


There are a lot of IXYS
IXTP2N100P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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