IXTP2N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Fall Time (Typ) :

27 ns

FET Feature :

--

Drain Current-Max (Abs) (ID) :

2A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Package :

Tube

Product Category :

MOSFET

Power Dissipation-Max :

86W Tc

Brand :

IXYS

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

RoHS :

Details

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Rise Time :

29ns

Mounting Type :

Through Hole

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

86W (Tc)

Series :

Polar™

Transistor Element Material :

SILICON

Turn-Off Delay Time :

80 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Lead Free :

Lead Free

Number of Terminations :

3

Base Product Number :

IXTP2

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Supplier Device Package :

TO-220AB

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

5A

Gate Charge (Qg) (Max) @ Vgs :

24.3nC @ 10V

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Product Status :

Active

Factory Lead Time :

17 Weeks

Power Dissipation :

86W

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~150°C TJ

Length :

10.66 mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Width :

4.83 mm

Terminal Position :

Single

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Height :

9.15 mm

Operating Mode :

ENHANCEMENT MODE

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Avalanche Energy Rating (Eas) :

150 mJ

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

1000 V

Drain to Source Breakdown Voltage :

1kV

Power Dissipation-Max (Abs) :

86 W

Drain-source On Resistance-Max :

7.5 Ω

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Element Configuration :

Single

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-30 Code :

R-PSFM-T3

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Continuous Drain Current (ID) :

2A

Mounting Style :

Through Hole

Number of Elements :

1

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)