IXTP2N100
- Mfr.Part #
- IXTP2N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO220AB
- Stock
- 248
- In Stock :
- 248
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Length :
- 10.66 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 100W Tc
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 1000V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 100W
- Rise Time :
- 15ns
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 1000 V
- Width :
- 4.82 mm
- Lead Free :
- Lead Free
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 2A
- Product Status :
- Active
- Power Dissipation (Max) :
- 100W (Tc)
- Channel Mode :
- Enhancement
- Resistance :
- 7.5mOhm
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 8A
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Base Product Number :
- IXTP2
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 30 ns
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 825pF @ 25V
- Number of Pins :
- 3
- Package :
- Tube
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Published :
- 2009
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 2A
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1A, 10V
- Series :
- --
- Brand :
- IXYS
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain-source On Resistance-Max :
- 7 Ω
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Surface Mount :
- No
- Element Configuration :
- Single
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 1kV
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Height :
- 9.15 mm
- Power Dissipation-Max (Abs) :
- 75 W
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 60 ns
- Datasheets
- IXTP2N100

N-Channel Tube 7 Ω @ 1A, 10V ±20V 825pF @ 25V 40nC @ 10V 1000V TO-220-3
IXTP2N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 825pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP2N100 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)
IXTP2N100 Applications
There are a lot of IXYS
IXTP2N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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