IXTP2N100

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Mfr.Part #
IXTP2N100
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO220AB
Stock
248
In Stock :
248

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Length :
10.66 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
100W Tc
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Mounting Type :
Through Hole
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-220AB
Avalanche Energy Rating (Eas) :
150 mJ
Product Type :
MOSFET
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
1000V
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
100W
Rise Time :
15ns
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
1000 V
Width :
4.82 mm
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
2A
Product Status :
Active
Power Dissipation (Max) :
100W (Tc)
Channel Mode :
Enhancement
Resistance :
7.5mOhm
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
8A
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Base Product Number :
IXTP2
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Fall Time (Typ) :
30 ns
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
825pF @ 25V
Number of Pins :
3
Package :
Tube
Configuration :
Single
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Mount :
Through Hole
Transistor Application :
SWITCHING
Mounting Style :
Through Hole
Terminal Position :
Single
Published :
2009
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
2A
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
Series :
--
Brand :
IXYS
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drain-source On Resistance-Max :
7 Ω
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Surface Mount :
No
Element Configuration :
Single
RoHS :
Details
Drain to Source Breakdown Voltage :
1kV
Case Connection :
DRAIN
Manufacturer :
IXYS
Height :
9.15 mm
Power Dissipation-Max (Abs) :
75 W
FET Type :
N-Channel
Turn-Off Delay Time :
60 ns
Datasheets
IXTP2N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, IXTP2N100 pinout, IXTP2N100 datasheet PDF, IXTP2N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2N100


N-Channel Tube 7 Ω @ 1A, 10V ±20V 825pF @ 25V 40nC @ 10V 1000V TO-220-3

IXTP2N100 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 825pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP2N100 Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)


IXTP2N100 Applications


There are a lot of IXYS
IXTP2N100 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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