IXTP2N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTP2

Configuration :

Single

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

FET Feature :

--

FET Type :

N-Channel

Number of Pins :

3

Package :

Tube

Vgs (Max) :

±20V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Power Dissipation-Max (Abs) :

75 W

Power Dissipation :

100W

Surface Mount :

No

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Terminals :

3

Brand :

IXYS

Product Category :

MOSFET

Resistance :

7.5mOhm

Width :

4.82 mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

1000 V

Power Dissipation-Max :

100W Tc

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Details

Element Configuration :

Single

Lead Free :

Lead Free

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

1kV

Qualification Status :

Not Qualified

Series :

--

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-609 Code :

e3

Length :

10.66 mm

Mount :

Through Hole

Pin Count :

3

Height :

9.15 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Channel Mode :

Enhancement

Turn-Off Delay Time :

60 ns

Mounting Style :

Through Hole

Number of Terminations :

3

Power Dissipation (Max) :

100W (Tc)

Avalanche Energy Rating (Eas) :

150 mJ

Continuous Drain Current (ID) :

2A

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

8A

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V

Terminal Finish :

Matte Tin (Sn)

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Product Status :

Active

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

7 Ω

Packaging :

Tube

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2009