IXTP28P065T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.045Ohm

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Case Connection :

DRAIN

Surface Mount :

No

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

45m Ω @ 14A, 10V

Mount :

Through Hole

Power Dissipation (Max) :

83W (Tc)

Transistor Polarity :

P-Channel

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

28 A

Base Product Number :

IXTP28

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

90A

Product Type :

MOSFET

Number of Channels :

1 Channel

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Factory Lead Time :

24 Weeks

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

28A

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Type :

1 P-Channel

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Published :

2010

Brand :

IXYS

Power Dissipation-Max (Abs) :

83 W

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

65V

Channel Mode :

Enhancement

Product Category :

MOSFET

Series :

TrenchP™

FET Type :

P-Channel

Transistor Element Material :

SILICON

Polarity/Channel Type :

P-Channel

Terminal Finish :

TIN SILVER COPPER

Supplier Device Package :

TO-220AB

Number of Elements :

1

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Power Dissipation-Max :

83W Tc

FET Feature :

--

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminations :

3

DS Breakdown Voltage-Min :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

29 ns

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Vgs (Max) :

±15V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole