IXTP26P10T

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Mfr.Part #
IXTP26P10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 100V 26A TO220AB
Stock
18,764
In Stock :
18,764

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
3820pF @ 25V
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Vgs (Max) :
±15V
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Rise Time :
15ns
Additional Feature :
AVALANCHE RATED
Power Dissipation :
150W
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
150 W
Element Configuration :
Single
Series :
TrenchP™
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Published :
2012
Manufacturer :
IXYS Corporation
Power Dissipation-Max :
150W Tc
Continuous Drain Current (ID) :
26A
Pin Count :
3
Polarity/Channel Type :
P-Channel
Package / Case :
TO-220-3
Gate to Source Voltage (Vgs) :
15V
Rds On (Max) @ Id, Vgs :
90m Ω @ 13A, 10V
Base Product Number :
IXTP26
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
100V
Qualification Status :
Not Qualified
Surface Mount :
No
DS Breakdown Voltage-Min :
100 V
Avalanche Energy Rating (Eas) :
300 mJ
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
26 A
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
26A Tc
FET Type :
P-Channel
Drain to Source Breakdown Voltage :
100V
Fall Time (Typ) :
1 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
150W (Tc)
Pulsed Drain Current-Max (IDM) :
80A
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-220AB
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Unknown
Turn-Off Delay Time :
37 ns
Package :
Tube
Product Status :
Active
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Drain-source On Resistance-Max :
0.09Ohm
Datasheets
IXTP26P10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP26P10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXTP26P10T pinout, IXTP26P10T datasheet PDF, IXTP26P10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP26P10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP26P10T


P-Channel Tube 90m Ω @ 13A, 10V ±15V 3820pF @ 25V 52nC @ 10V 100V TO-220-3

IXTP26P10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 26 A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTP26P10T Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)


IXTP26P10T Applications


There are a lot of IXYS
IXTP26P10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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