IXTP1R6N100D2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

JEDEC-95 Code :

TO-220AB

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

--

Transistor Polarity :

N-Channel

Pin Count :

3

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Brand :

IXYS

Power Dissipation-Max :

100W Tc

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Channel Mode :

Depletion

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Packaging :

Tube

Factory Lead Time :

24 Weeks

Number of Elements :

1

Package Shape :

RECTANGULAR

Product Status :

Active

Qualification Status :

Not Qualified

FET Type :

N-Channel

Manufacturer :

IXYS

RoHS :

Details

Number of Terminals :

3

Continuous Drain Current (ID) :

1.6A

Rds On (Max) @ Id, Vgs :

10 Ω @ 800mA, 0V

Transistor Application :

SWITCHING

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Base Product Number :

IXTP1

Series :

--

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-220AB

Power Dissipation-Max (Abs) :

100 W

Product Type :

MOSFET

Mounting Style :

Through Hole

JESD-30 Code :

R-PSFM-T3

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

Depletion Mode

Drain to Source Voltage (Vdss) :

1000V

FET Feature :

Depletion Mode

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Drain-source On Resistance-Max :

10 Ω

Transistor Element Material :

SILICON

Pbfree Code :

yes

Surface Mount :

No

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 25V

Power Dissipation (Max) :

100W (Tc)

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube