IXTP1R4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

Power Dissipation (Max) :

63W (Tc)

Rise Time :

35ns

Packaging :

Tube

Mounting Style :

Through Hole

JESD-609 Code :

e1

Factory Lead Time :

24 Weeks

Width :

4.83 mm

Mount :

Through Hole

FET Feature :

--

Terminal Position :

Single

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Drain-source On Resistance-Max :

11 Ω

Drain to Source Breakdown Voltage :

1kV

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Manufacturer :

IXYS

Fall Time (Typ) :

28 ns

RoHS Status :

ROHS3 Compliant

Height :

9.15 mm

Power Dissipation-Max (Abs) :

63 W

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Published :

2011

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

3A

Series :

Polar™

Qualification Status :

Not Qualified

Product Status :

Active

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

1.4A

Length :

10.66 mm

Number of Elements :

1

Product Category :

MOSFET

Surface Mount :

No

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Pin Count :

3

Reach Compliance Code :

Compliant

Package :

Tube

Power Dissipation-Max :

63W Tc

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

1000 V

Turn-Off Delay Time :

65 ns

Base Product Number :

IXTP1

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

100 mJ

Number of Terminals :

3

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

63W

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Supplier Device Package :

TO-220AB

Drain Current-Max (Abs) (ID) :

1.4 A

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

RoHS :

Details