IXTP1N80P

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Mfr.Part #
IXTP1N80P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 1A TO220AB
Stock
49,497
In Stock :
49,497

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Transistor Element Material :
SILICON
Published :
2009
Power Dissipation-Max :
42W Tc
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Number of Terminations :
3
Drain-source On Resistance-Max :
14 Ω
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
14 Ω @ 500mA, 10V
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Reach Compliance Code :
Compliant
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Surface Mount :
No
Packaging :
Tube
Pbfree Code :
yes
Package / Case :
TO-220-3
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Base Product Number :
IXTP1
JESD-609 Code :
e1
Case Connection :
DRAIN
Power Dissipation :
42W
Series :
Polar™
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
42 W
Transistor Polarity :
N-Channel
Pin Count :
3
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
2A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 50μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Drain Current-Max (Abs) (ID) :
1A
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
800 V
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
Drain to Source Voltage (Vdss) :
800V
Power Dissipation (Max) :
42W (Tc)
Product Status :
Active
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
800V
Factory Lead Time :
24 Weeks
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-220AB
JEDEC-95 Code :
TO-220AB
RoHS :
Details
Terminal Position :
Single
Continuous Drain Current (ID) :
1A
Avalanche Energy Rating (Eas) :
75 mJ
ECCN Code :
EAR99
Package :
Tube
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP1N80P pinout, IXTP1N80P datasheet PDF, IXTP1N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP1N80P


N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-220-3

IXTP1N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 2A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP1N80P Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 800V voltage
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)


IXTP1N80P Applications


There are a lot of IXYS
IXTP1N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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