IXTP1N80P
- Mfr.Part #
- IXTP1N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1A TO220AB
- Stock
- 49,497
- In Stock :
- 49,497
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 14 Ω
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 1A
- Package / Case :
- TO-220-3
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 2A
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Power Dissipation-Max (Abs) :
- 42 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Drain to Source Breakdown Voltage :
- 800V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 42W (Tc)
- Published :
- 2009
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 800 V
- Case Connection :
- DRAIN
- Number of Channels :
- 1 Channel
- Number of Terminals :
- 3
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 3
- Factory Lead Time :
- 24 Weeks
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Power Dissipation-Max :
- 42W Tc
- Power Dissipation :
- 42W
- FET Feature :
- --
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTP1
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- Polar™
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 1A
- Channel Mode :
- Enhancement
- Pin Count :
- 3
- Package :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 14 Ω @ 500mA, 10V
- ECCN Code :
- EAR99
- Datasheets
- IXTP1N80P

N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-220-3
IXTP1N80P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 2A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP1N80P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 800V voltage
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)
IXTP1N80P Applications
There are a lot of IXYS
IXTP1N80P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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