IXTP1N120P
- Mfr.Part #
- IXTP1N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 1A TO220AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 63W Tc
- Pin Count :
- 3
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 24 Weeks
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Package :
- Tube
- Fall Time (Typ) :
- 27 ns
- Packaging :
- Tube
- Height :
- 9.15 mm
- Power Dissipation (Max) :
- 63W (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17.6nC @ 10V
- Power Dissipation :
- 63W
- Product Status :
- Active
- Series :
- PolarVHV™
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 1A
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 10.66 mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Rise Time :
- 28ns
- Published :
- 2007
- JEDEC-95 Code :
- TO-220AB
- FET Feature :
- --
- Configuration :
- Single
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 1A
- Drain to Source Breakdown Voltage :
- 1.2kV
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTP1
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.82 mm
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 54 ns
- Supplier Device Package :
- TO-220AB
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Datasheets
- IXTP1N120P

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 550pF @ 25V 17.6nC @ 10V 1200V TO-220-3
IXTP1N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP1N120P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP1N120P Applications
There are a lot of IXYS
IXTP1N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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