IXTP16N50P
- Mfr.Part #
- IXTP16N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 2,658
- In Stock :
- 2,658
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Width :
- 4.83 mm
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 500 V
- Tradename :
- PolarHV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- PolarHV™
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- TO-220AB
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Case Connection :
- DRAIN
- Length :
- 10.66 mm
- Packaging :
- Tube
- Terminal Position :
- Single
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 16A
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 70 ns
- Voltage - Rated DC :
- 500V
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Power Dissipation-Max (Abs) :
- 300 W
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 25 ns
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 16 A
- Transistor Element Material :
- SILICON
- Type :
- PolarHV Power MOSFET
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 24 Weeks
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 8A, 10V
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Height :
- 16 mm
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- Matte Tin (Sn)
- Package :
- Tube
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Current Rating :
- 16A
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Number of Elements :
- 1
- Base Product Number :
- IXTP16
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5.5V
- Pin Count :
- 3
- Power Dissipation :
- 300W
- Power Dissipation-Max :
- 300W Tc
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 28ns
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.4Ohm
- Published :
- 2004
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Datasheets
- IXTP16N50P

N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-220-3
IXTP16N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 35 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTP16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a threshold voltage of 5.5V
a 500V drain to source voltage (Vdss)
IXTP16N50P Applications
There are a lot of IXYS
IXTP16N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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