IXTP16N50P

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Mfr.Part #
IXTP16N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
2,658
In Stock :
2,658

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Width :
4.83 mm
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Brand :
IXYS
DS Breakdown Voltage-Min :
500 V
Tradename :
PolarHV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
PolarHV™
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
750 mJ
Mount :
Through Hole
REACH SVHC :
No SVHC
Supplier Device Package :
TO-220AB
Manufacturer :
IXYS
Element Configuration :
Single
Power Dissipation (Max) :
300W (Tc)
Case Connection :
DRAIN
Length :
10.66 mm
Packaging :
Tube
Terminal Position :
Single
Configuration :
Single
Continuous Drain Current (ID) :
16A
Product Category :
MOSFET
Turn-Off Delay Time :
70 ns
Voltage - Rated DC :
500V
FET Feature :
--
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
35 A
Power Dissipation-Max (Abs) :
300 W
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
25 ns
Package Shape :
RECTANGULAR
Product Status :
Active
Drain Current-Max (Abs) (ID) :
16 A
Transistor Element Material :
SILICON
Type :
PolarHV Power MOSFET
JEDEC-95 Code :
TO-220AB
Factory Lead Time :
24 Weeks
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
400m Ω @ 8A, 10V
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
Height :
16 mm
Number of Pins :
3
JESD-30 Code :
R-PSFM-T3
Terminal Finish :
Matte Tin (Sn)
Package :
Tube
Number of Terminals :
3
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
500V
FET Type :
N-Channel
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Current Rating :
16A
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Number of Elements :
1
Base Product Number :
IXTP16
ECCN Code :
EAR99
Threshold Voltage :
5.5V
Pin Count :
3
Power Dissipation :
300W
Power Dissipation-Max :
300W Tc
Terminal Form :
THROUGH-HOLE
Rise Time :
28ns
Maximum Operating Temperature :
+ 150 C
Drain-source On Resistance-Max :
0.4Ohm
Published :
2004
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
500V
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Datasheets
IXTP16N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP16N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Type:PolarHV Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTP16N50P pinout, IXTP16N50P datasheet PDF, IXTP16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP16N50P


N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-220-3

IXTP16N50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 35 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTP16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a threshold voltage of 5.5V
a 500V drain to source voltage (Vdss)


IXTP16N50P Applications


There are a lot of IXYS
IXTP16N50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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