IXTP15N50L2
- Mfr.Part #
- IXTP15N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO220AB
- Stock
- 316
- In Stock :
- 316
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- DS Breakdown Voltage-Min :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Height :
- 16 mm
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Package :
- Tube
- MSL :
- -
- Factory Lead Time :
- 24 Weeks
- Base Product Number :
- IXTP15
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Length :
- 10.66 mm
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Rise Time :
- 73 ns
- Series :
- Linear L2™
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current Id :
- 15A
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 7.5A, 10V
- Published :
- 2009
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 2.5V
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Type :
- Linear L2 Power MOSFET
- Drain-source On Resistance-Max :
- 0.48Ohm
- Mount :
- Through Hole
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Tradename :
- Linear L2
- Nominal Vgs :
- 2.5 V
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Type :
- N Channel
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- FET Feature :
- --
- REACH SVHC :
- No SVHC
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4080pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 15 A
- Power Dissipation-Max (Abs) :
- 300 W
- Package / Case :
- TO-220-3
- Supplier Device Package :
- TO-220AB
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 15A
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Mounting Style :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Datasheets
- IXTP15N50L2

N-Channel Tube 480m Ω @ 7.5A, 10V ±20V 4080pF @ 25V 123nC @ 10V 500V TO-220-3
IXTP15N50L2 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 4080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 15A, which represents the maximum continuous current it can conduct.In this device, the drain current is 15 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 35 A, which is its maximum rated peak drain current.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP15N50L2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 15A
based on its rated peak drain current 35 A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTP15N50L2 Applications
There are a lot of IXYS
IXTP15N50L2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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