IXTP14N60P
- Mfr.Part #
- IXTP14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 75 W
- Packaging :
- Tube
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Published :
- 2008
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 42A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 7A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Series :
- PolarHV™
- Supplier Device Package :
- TO-220 Isolated Tab
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 600V
- Drain-source On Resistance-Max :
- 0.55Ohm
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 75W Tc
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Power Dissipation (Max) :
- 75W (Tc)
- Drain Current-Max (Abs) (ID) :
- 7A
- Base Product Number :
- IXTP14
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Datasheets
- IXTP14N60P
IXTP14N60P Documents

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IXTP14N60PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 42A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP14N60PM Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTP14N60PM Applications
There are a lot of IXYS
IXTP14N60PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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