IXTP14N60P
- Mfr.Part #
- IXTP14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Number of Terminations :
- 3
- Series :
- PolarHV™
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.55Ohm
- Vgs (Max) :
- ±30V
- Published :
- 2008
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 7A
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Factory Lead Time :
- 24 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-220 Isolated Tab
- Power Dissipation-Max :
- 75W Tc
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 42A
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 75W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Pbfree Code :
- yes
- Product Status :
- Active
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 75 W
- Number of Terminals :
- 3
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- DS Breakdown Voltage-Min :
- 600V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Drain Current-Max (Abs) (ID) :
- 7A
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTP14
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- IXTP14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IXTP14N60PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 42A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP14N60PM Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTP14N60PM Applications
There are a lot of IXYS
IXTP14N60PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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