IXTP12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

500 V

Packaging :

Tube

Lead Free :

Lead Free

Voltage - Rated DC :

500V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXTP12

Published :

2006

Vgs (Max) :

±30V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Number of Terminals :

3

Transistor Type :

1 N-Channel

Tradename :

Polar

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package Shape :

RECTANGULAR

Factory Lead Time :

24 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Width :

4.83 mm

Power Dissipation (Max) :

200W (Tc)

Reach Compliance Code :

Compliant

Terminal Position :

Single

Turn-Off Delay Time :

55 ns

Supplier Device Package :

TO-220AB

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Package :

Tube

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

200 W

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Power Dissipation-Max :

200W Tc

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

30 A

Mounting Type :

Through Hole

Rise Time :

27ns

Brand :

IXYS

RoHS :

Details

Avalanche Energy Rating (Eas) :

600 mJ

Pbfree Code :

yes

FET Feature :

--

Length :

10.66 mm

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

FET Type :

N-Channel

Current Rating :

12A

Case Connection :

DRAIN

Mount :

Through Hole

Fall Time (Typ) :

20 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

Polar™

Continuous Drain Current (ID) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

JEDEC-95 Code :

TO-220AB

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.5Ohm

Product Type :

MOSFET

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

500V

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

200W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain Current-Max (Abs) (ID) :

12 A

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Height :

16 mm

Type :

Polar Power MOSFET

Number of Channels :

1 Channel