IXTP120N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

16 ns

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

400 mJ

Power Dissipation-Max :

200W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

TrenchT2 Power MOSFET

Published :

2008

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 25A, 10V

Continuous Drain Current (ID) :

120A

Maximum Operating Temperature :

+ 175 C

Mount :

Through Hole

Pin Count :

3

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Width :

4.83 mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package :

Tube

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

40 V

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Length :

10.66 mm

RoHS :

Details

Product Category :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-220AB

Number of Terminals :

3

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

Series :

TrenchT2™

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0061Ohm

Product Type :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

JESD-609 Code :

e3

Height :

16 mm

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

Power Dissipation (Max) :

200W (Tc)

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

120 A

Number of Terminations :

3

Base Product Number :

IXTP120

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

200W

Supplier Device Package :

TO-220AB

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

200 W

Brand :

IXYS

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Factory Lead Time :

24 Weeks

Fall Time (Typ) :

11 ns

Terminal Position :

Single

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

360A

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Rise Time :

8ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

40V