IXTP10P50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs (Max) :

±20V

Rise Time :

28ns

Transistor Type :

1 P-Channel

Mounting Style :

Through Hole

Transistor Polarity :

P-Channel

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

300W (Tc)

Width :

4.7 mm

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

52 ns

Qualification :

-

JEDEC-95 Code :

TO-220AB

Channel Mode :

Enhancement

Channel Type :

P Channel

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Supplier Device Package :

TO-220AB

Tradename :

PolarP

Type :

PolarP Power MOSFET

Power Dissipation :

300W

Height :

15.9 mm

Drain to Source Breakdown Voltage :

-500V

Package / Case :

TO-220-3

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current Id :

10A

Resistance :

1Ohm

Reach Compliance Code :

Unknown

Number of Terminations :

3

Manufacturer :

IXYS

Length :

10.3 mm

Mount :

Through Hole

Base Product Number :

IXTP10

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Brand :

IXYS

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

30A

Number of Channels :

1 Channel

Pin Count :

3

Series :

PolarP™

Case Connection :

DRAIN

Product Category :

MOSFET

Transistor Application :

SWITCHING

Product Status :

Active

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

44 ns

Published :

2009

Continuous Drain Current (ID) :

10A

Lead Free :

Lead Free

Package :

Tube

RoHS :

Details

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1 Ω @ 5A, 10V

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

300W Tc

FET Feature :

--

Product Type :

MOSFET