IXFH96N15P

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Mfr.Part #
IXFH96N15P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 96A TO247AD
Stock
59,859
In Stock :
59,859

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
1000 mJ
Surface Mount :
No
Power Dissipation :
480W
JEDEC-95 Code :
TO-247AD
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Height :
21.46mm
Drain to Source Breakdown Voltage :
150V
Case Connection :
DRAIN
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DS Breakdown Voltage-Min :
150 V
Number of Elements per Chip :
1
Minimum Operating Temperature :
-55 °C
Radiation Hardening :
No
Power Dissipation-Max :
480W Tc
Number of Elements :
1
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
150V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Pin Count :
3
Terminal Position :
Single
Pbfree Code :
yes
Element Configuration :
Single
Mounting Style :
Through Hole
FET Type :
N-Channel
Product Status :
Active
Vgs (Max) :
±20V
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Packaging :
Tube
Published :
2006
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 4mA
Factory Lead Time :
30 Weeks
Package Type :
TO-247
Channel Type :
N
Transistor Polarity :
N-Channel
Package / Case :
TO-247-3
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Turn On Delay Time :
30 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Tradename :
HiPerFET
Continuous Drain Current (ID) :
96A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Package :
Box
Additional Feature :
AVALANCHE ENERGY RATED
Turn-Off Delay Time :
66 ns
Operating Temperature :
-55°C~175°C TJ
Width :
5.3mm
Series :
PolarHT™ HiPerFET™
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Channel Mode :
Enhancement
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.024Ohm
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
18 ns
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Mount :
Through Hole
Number of Terminals :
3
Maximum Operating Temperature :
+175 °C
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Configuration :
Single
Transistor Type :
1 N-Channel
Base Product Number :
IXFH96
Lead Free :
Lead Free
Rise Time :
33ns
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Power Dissipation (Max) :
480W (Tc)
JESD-609 Code :
e1
Length :
16.26mm
Pulsed Drain Current-Max (IDM) :
250A
Datasheets
IXFH96N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXFH96N15P pinout, IXFH96N15P datasheet PDF, IXFH96N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH96N15P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-247-3

IXFH96N15P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 96A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 66 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH96N15P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXFH96N15P Applications


There are a lot of IXYS
IXFH96N15P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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