IXFH96N15P
- Mfr.Part #
- IXFH96N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 96A TO247AD
- Stock
- 59,859
- In Stock :
- 59,859
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Surface Mount :
- No
- Power Dissipation :
- 480W
- JEDEC-95 Code :
- TO-247AD
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 21.46mm
- Drain to Source Breakdown Voltage :
- 150V
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 150 V
- Number of Elements per Chip :
- 1
- Minimum Operating Temperature :
- -55 °C
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 480W Tc
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 150V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Pin Count :
- 3
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Subcategory :
- MOSFETs
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Factory Lead Time :
- 30 Weeks
- Package Type :
- TO-247
- Channel Type :
- N
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Turn On Delay Time :
- 30 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 96A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Package :
- Box
- Additional Feature :
- AVALANCHE ENERGY RATED
- Turn-Off Delay Time :
- 66 ns
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 5.3mm
- Series :
- PolarHT™ HiPerFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain-source On Resistance-Max :
- 0.024Ohm
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 18 ns
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- +175 °C
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFH96
- Lead Free :
- Lead Free
- Rise Time :
- 33ns
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Power Dissipation (Max) :
- 480W (Tc)
- JESD-609 Code :
- e1
- Length :
- 16.26mm
- Pulsed Drain Current-Max (IDM) :
- 250A
- Datasheets
- IXFH96N15P

N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-247-3
IXFH96N15P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 96A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 66 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXFH96N15P Applications
There are a lot of IXYS
IXFH96N15P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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