IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2009

Channel Type :

N Channel

Qualification :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Type :

PolarHV HiPerFET Power MOSFET

Continuous Drain Current Id :

10A

JEDEC-95 Code :

TO-247AA

Case Connection :

DRAIN

Power Dissipation :

300W

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Rise Time :

22ns

Number of Elements :

1

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

800V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

600 mJ

Package :

Tube

Continuous Drain Current (ID) :

10A

Pin Count :

3

Power Dissipation-Max (Abs) :

300 W

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

30A

Brand :

IXYS

Rds On Max :

1.1 Ω

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Min Operating Temperature :

-55 °C

Base Product Number :

IXFH10

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Height :

21.46 mm

Drain Current-Max (Abs) (ID) :

10 A

Configuration :

Single

Pbfree Code :

yes

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.3 mm

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Mount :

Through Hole

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Length :

16.26 mm

Drain to Source Voltage (Vdss) :

800V

Input Capacitance :

2.05 nF

Drain-source On Resistance-Max :

1.1 Ω

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Terminal Position :

Single

Tradename :

HiPerFET

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

300 W

Product Status :

Active

Product Type :

MOSFET

DS Breakdown Voltage-Min :

800 V

Supplier Device Package :

TO-247AD (IXFH)

Mounting Style :

Through Hole

Turn-Off Delay Time :

62 ns

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

300W (Tc)

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Element Material :

SILICON

Series :

HiPerFET™, PolarHT™

Factory Lead Time :

30 Weeks

RoHS :

Details

Product Category :

MOSFET

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Maximum Operating Temperature :

+ 150 C

Drain to Source Resistance :

1.1 Ω

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Fall Time (Typ) :

22 ns

FET Type :

N-Channel

JESD-609 Code :

e1