IXFH10N80P

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Mfr.Part #
IXFH10N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO247AD
Stock
80
In Stock :
80

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarHT™
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
800V
Power Dissipation :
300W
Number of Channels :
1 Channel
FET Feature :
--
Element Configuration :
Single
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Mount :
Through Hole
Transistor Polarity :
N-Channel
Factory Lead Time :
30 Weeks
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Continuous Drain Current Id :
10A
Published :
2009
Pulsed Drain Current-Max (IDM) :
30A
Surface Mount :
No
Turn-Off Delay Time :
62 ns
Height :
21.46 mm
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Input Capacitance :
2.05 nF
Configuration :
Single
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Power Dissipation-Max (Abs) :
300 W
Rise Time :
22ns
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Qualification :
-
Drain to Source Voltage (Vdss) :
800V
Avalanche Energy Rating (Eas) :
600 mJ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Lead Free :
Lead Free
Product Category :
MOSFET
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
800 V
Qualification Status :
Not Qualified
Length :
16.26 mm
Current - Continuous Drain (Id) @ 25°C :
10A Tc
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-247-3
Drain Current-Max (Abs) (ID) :
10 A
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Rds On Max :
1.1 Ω
Product Status :
Active
Max Power Dissipation :
300 W
Number of Terminals :
3
Continuous Drain Current (ID) :
10A
Tradename :
HiPerFET
Operating Temperature :
-55°C~150°C TJ
Channel Type :
N Channel
Type :
PolarHV HiPerFET Power MOSFET
Package :
Tube
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Transistor Application :
SWITCHING
Min Operating Temperature :
-55 °C
Base Product Number :
IXFH10
Number of Terminations :
3
JEDEC-95 Code :
TO-247AA
Max Operating Temperature :
150 °C
Packaging :
Tube
Drain-source On Resistance-Max :
1.1 Ω
Drain to Source Resistance :
1.1 Ω
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Fall Time (Typ) :
22 ns
Width :
5.3 mm
Number of Elements :
1
Supplier Device Package :
TO-247AD (IXFH)
RoHS :
Details
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Power Dissipation (Max) :
300W (Tc)
Vgs (Max) :
±30V
Datasheets
IXFH10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Type:PolarHV HiPerFET Power MOSFET, Number of Terminations:3, IXFH10N80P pinout, IXFH10N80P datasheet PDF, IXFH10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3

IXFH10N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)


IXFH10N80P Applications


There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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