IXFH10N80P
- Mfr.Part #
- IXFH10N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO247AD
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHT™
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation :
- 300W
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Continuous Drain Current Id :
- 10A
- Published :
- 2009
- Pulsed Drain Current-Max (IDM) :
- 30A
- Surface Mount :
- No
- Turn-Off Delay Time :
- 62 ns
- Height :
- 21.46 mm
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 2.05 nF
- Configuration :
- Single
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Power Dissipation-Max (Abs) :
- 300 W
- Rise Time :
- 22ns
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Qualification :
- -
- Drain to Source Voltage (Vdss) :
- 800V
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800 V
- Qualification Status :
- Not Qualified
- Length :
- 16.26 mm
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Drain Current-Max (Abs) (ID) :
- 10 A
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 1.1 Ω
- Product Status :
- Active
- Max Power Dissipation :
- 300 W
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 10A
- Tradename :
- HiPerFET
- Operating Temperature :
- -55°C~150°C TJ
- Channel Type :
- N Channel
- Type :
- PolarHV HiPerFET Power MOSFET
- Package :
- Tube
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55 °C
- Base Product Number :
- IXFH10
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AA
- Max Operating Temperature :
- 150 °C
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 1.1 Ω
- Drain to Source Resistance :
- 1.1 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Fall Time (Typ) :
- 22 ns
- Width :
- 5.3 mm
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247AD (IXFH)
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 300W (Tc)
- Vgs (Max) :
- ±30V
- Datasheets
- IXFH10N80P

N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3
IXFH10N80P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH10N80P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)
IXFH10N80P Applications
There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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