IXFH10N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-247AD (IXFH)

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

10 A

Manufacturer :

Littelfuse Inc

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Mounting Type :

Through Hole

Power Dissipation (Max) :

300W (Tc)

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

4.5V @ 4mA

JEDEC-95 Code :

TO-247AD

Base Product Number :

IXFH10

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

Product Status :

Obsolete

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

900V

Number of Elements :

1

FET Feature :

--

DS Breakdown Voltage-Min :

900 V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

900V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

10A

Power Dissipation-Max (Abs) :

300 W

Package :

Tube

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

1.1 Ω

Published :

2003

Power Dissipation Ambient-Max :

300 W

Fall Time (Typ) :

18 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

900V

Mount :

Through Hole

Series :

HiPerFET™

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300W

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Turn-Off Delay Time :

51 ns

Continuous Drain Current (ID) :

10A

Rise Time :

12ns

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Terminal Position :

Single

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

40A