IXFH10N90

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Mfr.Part #
IXFH10N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 10A TO247AD
Stock
42,283
In Stock :
42,283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Contains Lead
Drain to Source Breakdown Voltage :
900V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Moisture Sensitivity Level (MSL) :
Not Applicable
Packaging :
Tube
Fall Time (Typ) :
18 ns
DS Breakdown Voltage-Min :
900 V
Supplier Device Package :
TO-247AD (IXFH)
Package :
Tube
FET Feature :
--
Pin Count :
3
Manufacturer :
Littelfuse Inc
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Reach Compliance Code :
Compliant
Power Dissipation-Max :
300W Tc
Mount :
Through Hole
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
10 A
Power Dissipation (Max) :
300W (Tc)
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max (Abs) :
300 W
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Turn-Off Delay Time :
51 ns
Number of Terminals :
3
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
40A
Pbfree Code :
yes
Voltage - Rated DC :
900V
FET Type :
N-Channel
Series :
HiPerFET™
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
1.1 Ω
Published :
2003
Power Dissipation Ambient-Max :
300 W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Number of Elements :
1
Rise Time :
12ns
Power Dissipation :
300W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current Rating :
10A
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
900V
Continuous Drain Current (ID) :
10A
Product Status :
Obsolete
Base Product Number :
IXFH10
Element Configuration :
Single
Datasheets
IXFH10N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFH10N90 pinout, IXFH10N90 datasheet PDF, IXFH10N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N90


N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH10N90 Overview


The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH10N90 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)


IXFH10N90 Applications


There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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