IXFH10N90

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Mfr.Part #
IXFH10N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 10A TO247AD
Stock
42,283
In Stock :
42,283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
300W (Tc)
Pulsed Drain Current-Max (IDM) :
40A
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-247AD (IXFH)
Voltage - Rated DC :
900V
Drain-source On Resistance-Max :
1.1 Ω
Surface Mount :
No
Published :
2003
Power Dissipation Ambient-Max :
300 W
Drain to Source Breakdown Voltage :
900V
Number of Terminations :
3
Element Configuration :
Single
Power Dissipation-Max (Abs) :
300 W
Case Connection :
DRAIN
Turn-Off Delay Time :
51 ns
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
10A
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
Not Applicable
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Current Rating :
10A
Power Dissipation :
300W
RoHS Status :
RoHS Compliant
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Pin Count :
3
DS Breakdown Voltage-Min :
900 V
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Number of Terminals :
3
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-247-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
18 ns
Series :
HiPerFET™
FET Feature :
--
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Lead Free :
Contains Lead
Base Product Number :
IXFH10
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
10A Tc
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
10 A
Terminal Position :
Single
Power Dissipation-Max :
300W Tc
Rise Time :
12ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
Littelfuse Inc
Product Status :
Obsolete
Pbfree Code :
yes
Number of Elements :
1
JEDEC-95 Code :
TO-247AD
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFH10N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IXFH10N90 pinout, IXFH10N90 datasheet PDF, IXFH10N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N90


N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH10N90 Overview


The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH10N90 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)


IXFH10N90 Applications


There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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