IXFH10N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Voltage - Rated DC :

900V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

Continuous Drain Current (ID) :

10A

Surface Mount :

No

Drain to Source Voltage (Vdss) :

900V

Mount :

Through Hole

Terminal Position :

Single

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

1.1 Ω

Product Status :

Obsolete

Case Connection :

DRAIN

Rise Time :

12ns

JEDEC-95 Code :

TO-247AD

Polarity/Channel Type :

N-Channel

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

900V

Published :

2003

Package / Case :

TO-247-3

Base Product Number :

IXFH10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

Littelfuse Inc

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

10 A

Power Dissipation-Max :

300W Tc

Power Dissipation (Max) :

300W (Tc)

Pin Count :

3

Power Dissipation :

300W

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

40A

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Supplier Device Package :

TO-247AD (IXFH)

Number of Terminals :

3

Current Rating :

10A

Power Dissipation Ambient-Max :

300 W

Series :

HiPerFET™

Element Configuration :

Single

Number of Elements :

1

FET Feature :

--

Power Dissipation-Max (Abs) :

300 W

FET Type :

N-Channel

Turn-Off Delay Time :

51 ns

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

900 V

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Fall Time (Typ) :

18 ns

Operating Mode :

ENHANCEMENT MODE