IXFH10N90
- Mfr.Part #
- IXFH10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO247AD
- Stock
- 42,283
- In Stock :
- 42,283
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-247AD (IXFH)
- Voltage - Rated DC :
- 900V
- Drain-source On Resistance-Max :
- 1.1 Ω
- Surface Mount :
- No
- Published :
- 2003
- Power Dissipation Ambient-Max :
- 300 W
- Drain to Source Breakdown Voltage :
- 900V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 300 W
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 51 ns
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 10A
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 10A
- Power Dissipation :
- 300W
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 900 V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 18 ns
- Series :
- HiPerFET™
- FET Feature :
- --
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Lead Free :
- Contains Lead
- Base Product Number :
- IXFH10
- Drain to Source Voltage (Vdss) :
- 900V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 10 A
- Terminal Position :
- Single
- Power Dissipation-Max :
- 300W Tc
- Rise Time :
- 12ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- Littelfuse Inc
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AD
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFH10N90

N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH10N90 Overview
The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH10N90 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFH10N90 Applications
There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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