IXFH10N90

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Mfr.Part #
IXFH10N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 10A TO247AD
Stock
42,283
In Stock :
42,283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Pbfree Code :
yes
Fall Time (Typ) :
18 ns
Vgs(th) (Max) @ Id :
4.5V @ 4mA
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
900 V
Package / Case :
TO-247-3
Drain-source On Resistance-Max :
1.1 Ω
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
300W Tc
Pin Count :
3
Product Status :
Obsolete
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
10 A
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Vgs (Max) :
±20V
Current Rating :
10A
JEDEC-95 Code :
TO-247AD
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation Ambient-Max :
300 W
Base Product Number :
IXFH10
Pulsed Drain Current-Max (IDM) :
40A
Additional Feature :
AVALANCHE RATED
Number of Terminals :
3
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
Not Applicable
Mounting Type :
Through Hole
Number of Elements :
1
Qualification Status :
Not Qualified
Packaging :
Tube
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
Power Dissipation-Max (Abs) :
300 W
Turn-Off Delay Time :
51 ns
Reach Compliance Code :
Compliant
Surface Mount :
No
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
900V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
10A
Published :
2003
Transistor Element Material :
SILICON
Package :
Tube
Lead Free :
Contains Lead
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Power Dissipation :
300W
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Manufacturer :
Littelfuse Inc
FET Feature :
--
Drain to Source Voltage (Vdss) :
900V
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
300W (Tc)
Rise Time :
12ns
Drain to Source Breakdown Voltage :
900V
Datasheets
IXFH10N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFH10N90 pinout, IXFH10N90 datasheet PDF, IXFH10N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N90


N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH10N90 Overview


The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH10N90 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)


IXFH10N90 Applications


There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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