IXFH10N90

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Mfr.Part #
IXFH10N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 10A TO247AD
Stock
42,283
In Stock :
42,283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
1.1 Ω
Pin Count :
3
Power Dissipation Ambient-Max :
300 W
Manufacturer :
Littelfuse Inc
Transistor Element Material :
SILICON
Lead Free :
Contains Lead
JESD-30 Code :
R-PSFM-T3
Element Configuration :
Single
Power Dissipation (Max) :
300W (Tc)
Product Status :
Obsolete
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Terminal Position :
Single
Base Product Number :
IXFH10
Continuous Drain Current (ID) :
10A
Number of Terminations :
3
Number of Terminals :
3
Power Dissipation :
300W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Number of Elements :
1
Power Dissipation-Max (Abs) :
300 W
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2003
Drain to Source Voltage (Vdss) :
900V
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
Not Applicable
Package :
Tube
Drain Current-Max (Abs) (ID) :
10 A
Pulsed Drain Current-Max (IDM) :
40A
Fall Time (Typ) :
18 ns
DS Breakdown Voltage-Min :
900 V
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Supplier Device Package :
TO-247AD (IXFH)
Series :
HiPerFET™
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Rise Time :
12ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
300W Tc
FET Feature :
--
Turn-Off Delay Time :
51 ns
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
900V
Current Rating :
10A
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Vgs (Max) :
±20V
Pbfree Code :
yes
JEDEC-95 Code :
TO-247AD
Current - Continuous Drain (Id) @ 25°C :
10A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
RoHS Compliant
Reach Compliance Code :
Compliant
Voltage - Rated DC :
900V
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH10N90 pinout, IXFH10N90 datasheet PDF, IXFH10N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N90


N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH10N90 Overview


The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH10N90 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)


IXFH10N90 Applications


There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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