IXFH10N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFH10

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

10A

Drain to Source Voltage (Vdss) :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

3

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain-source On Resistance-Max :

1.1 Ω

FET Type :

N-Channel

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

300 W

Supplier Device Package :

TO-247AD (IXFH)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AD

DS Breakdown Voltage-Min :

900 V

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Pin Count :

3

Reach Compliance Code :

Compliant

Element Configuration :

Single

Power Dissipation (Max) :

300W (Tc)

Power Dissipation-Max :

300W Tc

Continuous Drain Current (ID) :

10A

Turn-Off Delay Time :

51 ns

Rise Time :

12ns

Drain to Source Breakdown Voltage :

900V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Drain Current-Max (Abs) (ID) :

10 A

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

Not Applicable

Product Status :

Obsolete

Pbfree Code :

yes

Voltage - Rated DC :

900V

Lead Free :

Contains Lead

Packaging :

Tube

Terminal Position :

Single

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Series :

HiPerFET™

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Case Connection :

DRAIN

Fall Time (Typ) :

18 ns

Mount :

Through Hole

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Manufacturer :

Littelfuse Inc

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Power Dissipation Ambient-Max :

300 W