IXFH10N90
- Mfr.Part #
- IXFH10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO247AD
- Stock
- 42,283
- In Stock :
- 42,283
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 18 ns
- Continuous Drain Current (ID) :
- 10A
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Power Dissipation Ambient-Max :
- 300 W
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Package :
- Tube
- Supplier Device Package :
- TO-247AD (IXFH)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Base Product Number :
- IXFH10
- JEDEC-95 Code :
- TO-247AD
- Voltage - Rated DC :
- 900V
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 40A
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 1.1 Ω
- Packaging :
- Tube
- Series :
- HiPerFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 12ns
- Drain to Source Voltage (Vdss) :
- 900V
- Product Status :
- Obsolete
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 51 ns
- Drain Current-Max (Abs) (ID) :
- 10 A
- Lead Free :
- Contains Lead
- Power Dissipation :
- 300W
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Current Rating :
- 10A
- Published :
- 2003
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Manufacturer :
- Littelfuse Inc
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain to Source Breakdown Voltage :
- 900V
- DS Breakdown Voltage-Min :
- 900 V
- Datasheets
- IXFH10N90

N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH10N90 Overview
The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH10N90 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFH10N90 Applications
There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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