IXFH11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Package / Case :

TO-247-3

Resistance :

950mOhm

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Product Status :

Active

Height :

21.46 mm

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

32 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Power Dissipation (Max) :

300W (Tc)

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Transistor Type :

1 N-Channel

RoHS :

Details

Pin Count :

3

JEDEC-95 Code :

TO-247

Number of Pins :

3

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

11A

Product Category :

MOSFET

Packaging :

Tube

Terminal Position :

Single

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

800V

Transistor Application :

SWITCHING

Number of Terminals :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

11A

Qualification Status :

Not Qualified

Length :

16.26 mm

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Package :

Tube

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Published :

2000

DS Breakdown Voltage-Min :

800 V

Number of Elements :

1

Power Dissipation-Max (Abs) :

300 W

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Case Connection :

DRAIN

Number of Terminations :

3

Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.95 Ω

Mount :

Through Hole

Power Dissipation :

300W

Product Type :

MOSFET

Number of Channels :

1 Channel

Supplier Device Package :

TO-247AD (IXFH)

Brand :

IXYS

Tradename :

HyperFET

Width :

5.3 mm

Radiation Hardening :

No

Voltage - Rated DC :

800V

Pulsed Drain Current-Max (IDM) :

44A

Series :

HiPerFET™

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Rise Time :

33ns

Power Dissipation Ambient-Max :

300 W

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Turn-Off Delay Time :

63 ns

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

11 A

Element Configuration :

Single

Base Product Number :

IXFH11

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

300W Tc

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement