IXFH10N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 5A, 10V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

300W (Tc)

Pulsed Drain Current-Max (IDM) :

40A

Power Dissipation :

300W

Surface Mount :

No

Drain to Source Voltage (Vdss) :

1000V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-247AD (IXFH)

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

300W Tc

Product Type :

MOSFET

Vgs (Max) :

±20V

Brand :

IXYS

Drain to Source Breakdown Voltage :

1kV

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Continuous Drain Current (ID) :

10A

Width :

5.3 mm

JEDEC-95 Code :

TO-247AD

Rds On Max :

1.2 Ω

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

RoHS :

Compliant

Input Capacitance :

4 nF

Package :

Tube

Number of Terminals :

3

Manufacturer :

IXYS

Drain to Source Resistance :

1.2 Ω

Fall Time (Typ) :

15 ns

Max Power Dissipation :

300 W

DS Breakdown Voltage-Min :

1000 V

Drain-source On Resistance-Max :

1.2 Ω

Transistor Application :

SWITCHING

Height :

21.46 mm

Max Operating Temperature :

150 °C

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Channel Mode :

Enhancement

Published :

2004

Transistor Polarity :

N-Channel

Configuration :

Single

Pin Count :

3

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Package / Case :

TO-247-3

Rise Time :

23ns

Polarity/Channel Type :

N-Channel

Length :

16.26 mm

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Base Product Number :

IXFH10

Number of Channels :

1 Channel

Min Operating Temperature :

-55 °C

Number of Pins :

3

Series :

HiPerFET™

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Qualification Status :

Not Qualified

Subcategory :

MOSFETs

Product Status :

Active

Packaging :

Tube