IXFH100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

RoHS :

Details

Drain-source On Resistance-Max :

0.027Ohm

Product Category :

MOSFET

Transistor Application :

SWITCHING

Pbfree Code :

yes

Length :

16.26 mm

Rise Time :

26ns

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Element Configuration :

Single

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

250 V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

250V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Manufacturer :

IXYS

Width :

5.3 mm

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation :

600W

Type :

PolarHT HiPerFET Power MOSFET

Mounting Style :

Through Hole

Supplier Device Package :

TO-247AD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Power Dissipation (Max) :

600W (Tc)

Avalanche Energy Rating (Eas) :

2000 mJ

Height :

21.46 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXFH100

Turn-Off Delay Time :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

FET Feature :

-

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

600W Tc

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

250A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Published :

2006

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Minimum Operating Temperature :

- 55 C

Configuration :

Single

JESD-609 Code :

e1

Transistor Type :

1 N-Channel

Terminal Position :

Single

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Product Type :

MOSFET

Series :

PolarHT™ HiPerFET™

Continuous Drain Current (ID) :

100A

Product Status :

Active

Package :

Tube

Rds On (Max) @ Id, Vgs :

27m Ω @ 50A, 10V

Package / Case :

TO-247-3

Tradename :

HiPerFET

Vgs (Max) :

±20V

Fall Time (Typ) :

28 ns

JEDEC-95 Code :

TO-247AD