IXFH110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Height :

21.46mm

JEDEC-95 Code :

TO-247AD

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

65 ns

Supplier Device Package :

TO-247AD (IXFH)

Subcategory :

MOSFETs

Channel Type :

N

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Surface Mount :

No

Element Configuration :

Single

Transistor Application :

SWITCHING

Threshold Voltage :

5V

Mount :

Through Hole

Packaging :

Tube

Channel Mode :

Enhancement

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

110A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Number of Pins :

3

Rise Time :

25ns

Factory Lead Time :

30 Weeks

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

Turn On Delay Time :

21 ns

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Number of Elements :

1

Number of Terminals :

3

Manufacturer :

IXYS

Base Product Number :

IXFH110

Width :

5.3mm

FET Type :

N-Channel

RoHS :

Details

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Reach Compliance Code :

Compliant

Power Dissipation-Max :

480W Tc

Continuous Drain Current Id :

110A

Package Type :

TO-247

Pbfree Code :

yes

MSL :

-

Series :

PolarHT™ HiPerFET™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

16.26mm

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

480W (Tc)

Avalanche Energy Rating (Eas) :

1000 mJ

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+175 °C

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Pin Count :

3

Product Status :

Active

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation :

480W

Fall Time (Typ) :

25 ns

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Terminal Position :

Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

FET Feature :

--

Drain-source On Resistance-Max :

0.015 Ω

Minimum Operating Temperature :

-55 °C

Type :

PolarHT HiPerFET Power MOSFET

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100 V

Package :

Tube

Published :

2006

Qualification :

-

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements per Chip :

1

Brand :

IXYS

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

250A

Drain to Source Breakdown Voltage :

100V